{"title":"The Study of Transport Properties of (III−Mn) V Diluted Magnetic Semiconductors","authors":"Edosa Tasisa Jira, H. Berry","doi":"10.1155/2023/8860586","DOIUrl":null,"url":null,"abstract":"We investigated the transport properties of diluted magnetic semiconductors (DMSs) theoretically by using the Heisenberg and Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange interaction models by considering both spin and charge disorder. The formalism is applied to the specific case of \n \n \n Ga\n \n 1\n −\n x\n \n \n \n Mn\n \n x\n \n \n As\n \n . Using the Heisenberg model and the Green function formalism the total thermal excitation of the magnon is calculated. The magnetization and Curie temperature of \n \n Mn\n \n -doped \n \n GaAs\n \n is calculated. The theoretical calculation of \n \n \n T\n \n C\n \n \n \n of \n \n \n Ga\n \n 1\n −\n x\n \n \n \n Mn\n \n x\n \n \n As\n \n at x = 0.08 has a good agreement with the experimental calculation at x = 0.08 (i.e., 162 k). The exchange interaction constant and spin-dependent relaxation time is calculated by using RKKY interaction. The electrical conductivity and hole mobility are calculated by using the Boltzmann transport equation and the spin-dependent relaxation time. The electrical conductivity of \n \n Mn\n \n -doped III–V DMS is exponentially increased with temperature and magnetic impurity concentration. Hole mobility of \n \n Mn\n \n -doped III–V diluted magnetic semiconductor is increased with the magnetic impurity concentration.","PeriodicalId":7382,"journal":{"name":"Advances in Condensed Matter Physics","volume":"52 1","pages":""},"PeriodicalIF":1.8000,"publicationDate":"2023-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Condensed Matter Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1155/2023/8860586","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
We investigated the transport properties of diluted magnetic semiconductors (DMSs) theoretically by using the Heisenberg and Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange interaction models by considering both spin and charge disorder. The formalism is applied to the specific case of
Ga
1
−
x
Mn
x
As
. Using the Heisenberg model and the Green function formalism the total thermal excitation of the magnon is calculated. The magnetization and Curie temperature of
Mn
-doped
GaAs
is calculated. The theoretical calculation of
T
C
of
Ga
1
−
x
Mn
x
As
at x = 0.08 has a good agreement with the experimental calculation at x = 0.08 (i.e., 162 k). The exchange interaction constant and spin-dependent relaxation time is calculated by using RKKY interaction. The electrical conductivity and hole mobility are calculated by using the Boltzmann transport equation and the spin-dependent relaxation time. The electrical conductivity of
Mn
-doped III–V DMS is exponentially increased with temperature and magnetic impurity concentration. Hole mobility of
Mn
-doped III–V diluted magnetic semiconductor is increased with the magnetic impurity concentration.
期刊介绍：
Advances in Condensed Matter Physics publishes articles on the experimental and theoretical study of the physics of materials in solid, liquid, amorphous, and exotic states. Papers consider the quantum, classical, and statistical mechanics of materials; their structure, dynamics, and phase transitions; and their magnetic, electronic, thermal, and optical properties.
Submission of original research, and focused review articles, is welcomed from researchers from across the entire condensed matter physics community.
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