Aspects concerning cycle-to-cycle jitter in a comparator based relaxation oscillator

M. Mocanu, M. Gurzun, L. Goras
{"title":"Aspects concerning cycle-to-cycle jitter in a comparator based relaxation oscillator","authors":"M. Mocanu, M. Gurzun, L. Goras","doi":"10.1109/SMICND.2012.6400740","DOIUrl":null,"url":null,"abstract":"In this paper several formulas for cycle-to-cycle jitter in a simple comparator based relaxation oscillator are derived. The main contribution consists in the fact that the jitter produced by the white noise sources is evaluated by taking into consideration the slew-rate of the comparator.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"131 1","pages":"425-428"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"CAS 2012 (International Semiconductor Conference)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2012.6400740","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

In this paper several formulas for cycle-to-cycle jitter in a simple comparator based relaxation oscillator are derived. The main contribution consists in the fact that the jitter produced by the white noise sources is evaluated by taking into consideration the slew-rate of the comparator.
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基于比较器的弛豫振荡器中周期到周期抖动的几个方面
本文推导了基于简单比较器的弛豫振荡器中周期间抖动的几个公式。主要的贡献在于白噪声源产生的抖动是通过考虑比较器的回转率来评估的。
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