{"title":"CdO/ZnO multiple quantum wells as components for next generation solar cells","authors":"V. Venkatachalapathy, A. Galeckas, A. Kuznetsov","doi":"10.1109/PVSC.2013.6744162","DOIUrl":null,"url":null,"abstract":"We report on time-resolved and steady state photoluminescence (PL) studies of strained ZnxCd1-xO/ZnO MQW structures grown on c-plane and r-plane sapphire substrates by Metaloranic Vapor Phase Epitaxy. The high crystalline quality of all MQW structures was confirmed by X-ray diffraction measurements. No emission related to ZnO barriers could be resolved in PL spectra implying effective carrier confinement in the quantum wells. The estimated built-in electric field from optical transition is of the order of ~ 1.75 MV/cm. The observed spectral and carrier lifetime variations are discussed in terms of quantum confinement and internal electric field modulation induced by strain.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"255 1","pages":"0337-0342"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6744162","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We report on time-resolved and steady state photoluminescence (PL) studies of strained ZnxCd1-xO/ZnO MQW structures grown on c-plane and r-plane sapphire substrates by Metaloranic Vapor Phase Epitaxy. The high crystalline quality of all MQW structures was confirmed by X-ray diffraction measurements. No emission related to ZnO barriers could be resolved in PL spectra implying effective carrier confinement in the quantum wells. The estimated built-in electric field from optical transition is of the order of ~ 1.75 MV/cm. The observed spectral and carrier lifetime variations are discussed in terms of quantum confinement and internal electric field modulation induced by strain.
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