Effect of annealing process on ZnO nanorod prepared at different potentials using electrodeposition technique

Abstract

Nanostructures of Zinc Oxide (ZnO) are mostly reported that have potential to expand the new materials for devices applications. ZnO materials came from group II–IV in semiconductor and have hexagonal structures. For example this materials were fabricate in LED, Transistors, Transducers and Solar cell application. Many types of nanostructured have been synthesis such as nanoparticles, nanoflower, nanobelt, nanospring, nanowires and nanorods. Many techniques were used to deposit the ZnO nanostructured that have been prepared by several technique, such as Chemical Vapor deposition (CVD), hydrothermal method, and electrochemical deposition. The advantages of using electrochemical deposition are simple, economical, high deposition rate and deposition over large area [1]. This technique to deposit ZnO was first reported by Izaki and Omi [2] and Peulon and Lincot [3] more than ten years ago.