Analysis of Warpage and Stress Behavior in a Fine Pitch Multi-Chip Interconnection with Ultrafine-Line Organic Substrate (2.1D)

Chen-Yu Huang, Yuan-Hung Hsu, Y. Lu, K. Yu, W. Tsai, Chang-Fu Lin, C. Chung
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引用次数: 8

Abstract

The multi-chip module assembled with a composite layer of thin film on top of organic substrate is presented in this paper. This is a new-arising assembly technology with equivalent electrical performance of 2.5D package but much simplified supply-chain processes. We name this package as 2.1D package which converts the silicon interposer on the substrate. In this paper, the implementation of 2.1D technology on the monolithic, daisy-chain test vehicle is described. We employed thermal compression bonding (TCB) to mount two large dies with minimum 40 ?m-pitch micro bumps onto 45 x 45 mm organic substrate using 2/2 µm line width/space (L/S). Thermally induced misalignment, substrate warpage and the ELK (Extreme Low-K) stress during micro bumps joining with micro pads on substrate were evaluated. The mechanism of micro bump misalignment during solder formation has been experimentally and numerical validated by TCB and conventional mass reflow (MR) process. Finite element analyses were conducted to understand the 2.1D package warpage and stress behaviors, and hence defined better materials and process parameters. Simulation results showed that micro bump joining by TCB has 45% misalignment improvement as compared to MR process. In stress simulation results, the ELK layer stress of micro bump using TCB has a 59% reduction with reference to MR. In addition, the warpage behavior of fine-line organic substrate and 2.1D full package were measured using conventional shadow moiré system. Results showed that the warpage variation of thin-film coated substrates was very stable within micro pads area that has less than 10 µm differences under high temperature period (120~260 °C). However, the package moiré results showed that the thermally attaching of stiffener ring could significantly affect the global package warpage based on moiré contours and warpage distributions. The reliability of this developed 2.1D, multi-chip test vehicle using TCB assembling processes was validated as well. This package passed MSL4 preconditioning and 1000 thermal cycles using G-conditions (-40~125 °C).
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超细线有机衬底(2.1D)细间距多芯片互连的翘曲和应力行为分析
本文提出了在有机衬底上装配复合薄膜层的多芯片模块。这是一种新兴的装配技术,其电气性能与2.5D封装相当,但大大简化了供应链流程。我们将这种封装命名为2.1D封装,它转换了衬底上的硅中间层。本文介绍了2.1D技术在单片菊花链试验车上的实现。我们采用热压缩键合(TCB)将两个具有最小40 μ m间距微凸起的大型模具安装在45 x 45 mm有机基板上,线宽/空间(L/S)为2/2 μ m。研究了热致错位、衬底翘曲以及衬底微凸起与微垫连接时的ELK(极低k)应力。通过TCB和传统的质量回流(MR)工艺,对焊料形成过程中微凹凸错位的机理进行了实验和数值验证。通过有限元分析来了解2.1D封装翘曲和应力行为,从而确定更好的材料和工艺参数。仿真结果表明,与MR工艺相比,TCB工艺的微凸点连接的不对中率提高了45%。在应力模拟结果中,使用TCB的微凸点的ELK层应力与mr相比降低了59%。此外,使用传统的阴影变形系统测量了细线有机衬底和2.1D全封装的翘曲行为。结果表明,在高温期(120~260℃),薄膜涂层基板的翘曲变化在微衬垫区域内非常稳定,差异小于10µm。然而,从变形轮廓和变形分布来看,强化环的热附著对整体变形有显著影响。采用TCB装配工艺的2.1D多芯片测试车的可靠性也得到了验证。该封装通过了MSL4预处理和在g条件下(-40~125°C)进行1000次热循环。
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