M. Hardy, D. Meyer, N. Nepal, B. Downey, D. Scott Katzer, D. Storm
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引用次数: 4
Abstract
Incorporating a novel ultra-wide bandgap material, ScAlN, as the layer material in III-nitride highelectron-mobility transistors has the potential to improve output power at millimeter wave frequencies. Lattice-matched ScAlN can be grown by molecular beam epitaxy with high interfacial quality and phase purity. Varying the ScAlN barrier thickness from 3–25 nm results in sheet charge densities of 2.0–3.2 × 1013 cm−2and electron mobilities as high as 1060 cm2/V·s
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