Influence of cationic substitution on the electronic structure of Cu7SiS5I and Ag7SiS5I compounds

D. Bletskan, V. Vakulchak, V. Lisý, I. Studenyak
{"title":"Influence of cationic substitution on the electronic structure of Cu7SiS5I and Ag7SiS5I compounds","authors":"D. Bletskan, V. Vakulchak, V. Lisý, I. Studenyak","doi":"10.1063/5.0060902","DOIUrl":null,"url":null,"abstract":"From the first principles in the framework of the density functional theory in LDA+U approximations, the band structure, the total and partial densities of electronic states, also the spatial distribution of the electron charge density of Cu7SiS5I and Ag7SiS5I superionic crystals had been calculated. The CuAg substitution in the Cu7SiS5I and Ag7SiS5I compounds, along with an increase of the total width of the valence band, leads to a broadening and a change in the topology of the upper bond of the valence band, due to the pd-hybridization emerging between copper (silver) and sulfur atoms. It follows from the calculations of the band structure that the Cu7SiS5I compound is a direct-gap while Ag7SiS5I indirect semiconductor. Based on the data of the total and partial densities of electronic states, the contributions of atomic orbitals to crystalline ones are determined, also the data of the chemical bond formation in the crystals under discussion are obtained.","PeriodicalId":18837,"journal":{"name":"NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0060902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

From the first principles in the framework of the density functional theory in LDA+U approximations, the band structure, the total and partial densities of electronic states, also the spatial distribution of the electron charge density of Cu7SiS5I and Ag7SiS5I superionic crystals had been calculated. The CuAg substitution in the Cu7SiS5I and Ag7SiS5I compounds, along with an increase of the total width of the valence band, leads to a broadening and a change in the topology of the upper bond of the valence band, due to the pd-hybridization emerging between copper (silver) and sulfur atoms. It follows from the calculations of the band structure that the Cu7SiS5I compound is a direct-gap while Ag7SiS5I indirect semiconductor. Based on the data of the total and partial densities of electronic states, the contributions of atomic orbitals to crystalline ones are determined, also the data of the chemical bond formation in the crystals under discussion are obtained.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
阳离子取代对Cu7SiS5I和Ag7SiS5I化合物电子结构的影响
从LDA+U近似中密度泛函理论的第一性原理出发,计算了Cu7SiS5I和Ag7SiS5I超离子晶体的能带结构、电子态的总密度和偏密度以及电子电荷密度的空间分布。Cu7SiS5I和Ag7SiS5I化合物中的Cu银取代,随着价带总宽度的增加,由于铜(银)和硫原子之间出现了pd杂化,导致价带上键的变宽和拓扑结构的变化。从能带结构计算可知,Cu7SiS5I化合物为直接隙半导体,而Ag7SiS5I化合物为间接隙半导体。根据电子态总密度和部分密度的数据,确定了原子轨道对晶体轨道的贡献,并得到了所讨论的晶体中化学键形成的数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Effect of tungsten doping on the properties of PZN-PT single crystals Relation between mechanical and tribological properties of plasma nitrided and TiCrN coated YXR-7 tool steel Investigation on chemical instability and optical absorption of ion bombarded Si surfaces Dielectric properties and AC conductivity of green synthesized nano La2O3/La(OH)3 Polypropylene/glass fiber/ethylene propylene diene ternary composites with improved thermoforming properties for orthotic aids
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1