{"title":"Enhancement in the extraction efficiency of GaN-based LED with naturally textured surface","authors":"Y. Hsieh, S. Kuo, F. Lai","doi":"10.1109/CLEOPR.2009.5292606","DOIUrl":null,"url":null,"abstract":"GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850°C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.","PeriodicalId":6452,"journal":{"name":"2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Conference on Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEOPR.2009.5292606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition (MOCVD) were fabricated. A naturally textured p-GaN surface layer was achieved by controlling the growth temperature. The output power of the naturally textured surface LED with 850°C growth temperature increased > 50% than the commercial LED. The results show that the naturally textured surface LED could extremely enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.