E. Pérez, A. Grossi, C. Zambelli, M. K. Mahadevaiah, P. Olivo, C. Wenger
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引用次数: 4
Abstract
In this paper, the impact of the forming temperature on the reliability of Hafnium-based RRAM arrays has been investigated. A wide range of high temperatures from 25 °C to 150 °C during the forming operations have been applied. Endurance and retention tests have been performed at room temperature and at 150 °C, respectively. The optimized Incremental Step Pulse and Verify Algorithm (ISPVA) has been used for write operations in order to reduce the cell-to-cell variability. The electricalperformance of HfO2 and Hf1-$_\mathrm{1-x}\mathbf{Al}\mathbf{xAl} _{\mathbf {x}} \mathbf {O} _{\mathbf {y}}$RRAM arrays will be compared.
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