ZnO films with very high haze ratio prepared by MOCVD technique

Abstract

We have successfully fabricated zinc oxide (ZnO) films with a very high haze value using metal organic chemical vapor deposition (MOCVD) technique by conducting a glass substrate etching before film deposition. Effect of glass treatment time on the properties of ZnO films was investigated. It was found that the surface morphology of ZnO films can be modified by adjusting the glass treatment time without preserving their good transparency and electrical properties. Using boron-doped ZnO (ZnO:B) films with a high haze value as front TCO films in thin film Si solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region. Thus, the obtained ZnO:B films have a lot of potentials to be used as the front TCO layers in silicon-based thin film solar cells.