A Study about Non-Volatile Memories

D. Kumar
{"title":"A Study about Non-Volatile Memories","authors":"D. Kumar","doi":"10.20944/PREPRINTS201607.0093.V1","DOIUrl":null,"url":null,"abstract":"This paper presents an upcoming nonvolatile memories (NVM) overview. Non-volatile memory devices are electrically programmable and erasable to store charge in a location within the device and to retain that charge when voltage supply from the device is disconnected. The non-volatile memory is typically a semiconductor memory comprising thousands of individual transistors configured on a substrate to form a matrix of rows and columns of memory cells. Non-volatile memories are used in digital computing devices for the storage of data. In this paper we have given introduction including a brief survey on upcoming NVM's such as FeRAM, MRAM, CBRAM, PRAM, SONOS, RRAM, Racetrack memory and NRAM. In future Non-volatile memory may eliminate the need for comparatively slow forms of secondary storage systems, which include hard disks.","PeriodicalId":13360,"journal":{"name":"Imperial journal of interdisciplinary research","volume":"70 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2016-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Imperial journal of interdisciplinary research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.20944/PREPRINTS201607.0093.V1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper presents an upcoming nonvolatile memories (NVM) overview. Non-volatile memory devices are electrically programmable and erasable to store charge in a location within the device and to retain that charge when voltage supply from the device is disconnected. The non-volatile memory is typically a semiconductor memory comprising thousands of individual transistors configured on a substrate to form a matrix of rows and columns of memory cells. Non-volatile memories are used in digital computing devices for the storage of data. In this paper we have given introduction including a brief survey on upcoming NVM's such as FeRAM, MRAM, CBRAM, PRAM, SONOS, RRAM, Racetrack memory and NRAM. In future Non-volatile memory may eliminate the need for comparatively slow forms of secondary storage systems, which include hard disks.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
非易失性记忆的研究
本文介绍了即将到来的非易失性存储器(NVM)概述。非易失性存储器器件是电可编程和可擦除的,用于在器件内的某个位置存储电荷,并在断开来自器件的电压供应时保留该电荷。非易失性存储器通常是一种半导体存储器,包括在衬底上配置的数千个单独的晶体管,以形成存储单元的行和列矩阵。非易失性存储器在数字计算设备中用于存储数据。在本文中,我们给出了介绍,包括对即将到来的NVM的简要调查,如FeRAM, MRAM, CBRAM, PRAM, SONOS, RRAM,赛道内存和NRAM。在将来,非易失性存储器可以消除对包括硬盘在内的相对较慢形式的辅助存储系统的需要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
The Nature of Government Legal Responsibility towards Environmental Pollution Automatic Street Light Control System Control of a Bidirectional Converter to Interface Electrochemical double layer capacitors with Renewable Energy Sources Factors affecting Mortality Rate of infants and under five in the Philippines: An application of Structural Equation Modeling Noise Pollution in Construction Industry & its adverse effects on construction workers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1