L. Kranz, R. Schmitt, C. Gretener, J. Perrenoud, F. Pianezzi, A. Uhl, D. Keller, S. Buecheler, A. Tiwari
{"title":"Progress towards 14% efficient CdTe solar cells in substrate configuration","authors":"L. Kranz, R. Schmitt, C. Gretener, J. Perrenoud, F. Pianezzi, A. Uhl, D. Keller, S. Buecheler, A. Tiwari","doi":"10.1109/PVSC.2013.6744460","DOIUrl":null,"url":null,"abstract":"CdTe solar cells are conventionally grown in superstrate configuration. However, the growth in substrate configuration offers more control of junction properties as recrystallization of CdTe and junction formation with CdS can be decoupled. In this paper the influence of various annealing treatment conditions of the CdS layer on its morphology and phase and on the device properties is presented. The presence of CdCl2 during this annealing treatment is important for the phase change of the CdS layer to hexagonal wurtzite and for high efficiencies. A CdCl2 treatment of the CdS at 360 °C improves the efficiency of the device without the adverse effect of pinhole formation in the CdS. CdTe solar cells in substrate configuration with more than 13% efficiency are achieved as a progress towards 14% efficiency.","PeriodicalId":6350,"journal":{"name":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"1644-1648"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2013.6744460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
CdTe solar cells are conventionally grown in superstrate configuration. However, the growth in substrate configuration offers more control of junction properties as recrystallization of CdTe and junction formation with CdS can be decoupled. In this paper the influence of various annealing treatment conditions of the CdS layer on its morphology and phase and on the device properties is presented. The presence of CdCl2 during this annealing treatment is important for the phase change of the CdS layer to hexagonal wurtzite and for high efficiencies. A CdCl2 treatment of the CdS at 360 °C improves the efficiency of the device without the adverse effect of pinhole formation in the CdS. CdTe solar cells in substrate configuration with more than 13% efficiency are achieved as a progress towards 14% efficiency.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
