Structural and Optoelectronic Properties of Zinc Sulfide Thin Films Synthesized by Co-Precipitation Method

IF 0.4 Q4 CHEMISTRY, MULTIDISCIPLINARY Acta Chemica Iasi Pub Date : 2019-12-01 DOI:10.2478/achi-2019-0018
V. Choudapur, S. B. Kapatkar, A. Raju
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引用次数: 11

Abstract

Abstract Wide bandgap Zinc Sulfide nanocrystals are prepared by a simple co-precipitation method at different precursor concentrations. The influence of sulphur concentration in Zinc sulfide on morphological, optical and electric properties is found to be significant. The Zinc Sulfide nanomaterial was prepared using low-cost starting materials and deionised water as the solvent. As synthesized Zinc Sulfide nanocrystals were analyzed using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS) analysis, UV-Visible Spectrophotometry, Photoluminescence (PL), Scanning electron Microscopy (SEM), Ellipsometry techniques and electric conductivity measurements. XRD patterns revealed that ZnS nanocrystals are polycrystalline, cubic phase with (111) preferred orientation. The obtained crystallites have sizes in the range of 5 to 11 nm. EDS pattern confirms the purity of the films. From optical absorption measurements, it is clear that the direct energy gap decreases from 5.2 to 4.4eV with the increase in sulphur concentration in ZnS and exhibit large quantum confinement effect. Ellipsometry was used to determine the optical constants and film thickness. The films deposited on ITO – coated glass was used to record the IV Characteristics of the films by two probe method. The wide-bandgap, conducting materials have applications in optoelectronic devices such as high-frequency UV detectors and thin-film solar cells.
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共沉淀法合成硫化锌薄膜的结构与光电性能
摘要在不同前驱体浓度下,采用简单共沉淀法制备了宽禁带硫化锌纳米晶体。硫化物中硫的浓度对锌的形态、光学和电学性质的影响是显著的。以低成本原料和去离子水为溶剂制备了硫化锌纳米材料。采用x射线衍射(XRD)、能谱分析(EDS)、紫外可见分光光度法、光致发光(PL)、扫描电镜(SEM)、椭偏技术和电导率测量等方法对合成的硫化锌纳米晶体进行了分析。XRD分析表明,ZnS纳米晶为多晶、立方相、(111)择优取向。所得晶体尺寸在5 ~ 11nm之间。能谱图证实了薄膜的纯度。光学吸收测量表明,随着ZnS中硫浓度的增加,直接能隙从5.2 ev减小到4.4eV,并表现出较大的量子约束效应。采用椭偏法测定了光学常数和膜厚。用双探针法记录了沉积在ITO涂层玻璃上的膜的IV特性。这种宽带隙导电材料在光电器件中有广泛的应用,如高频紫外探测器和薄膜太阳能电池。
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来源期刊
Acta Chemica Iasi
Acta Chemica Iasi CHEMISTRY, MULTIDISCIPLINARY-
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审稿时长
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