L.M. Fraas, J.E. Avery, P.E. Gruenbaum, R.J. Ballantyne, E. Malocsay
{"title":"Tandem gallium solar cell voltage-matched circuit performance projections","authors":"L.M. Fraas, J.E. Avery, P.E. Gruenbaum, R.J. Ballantyne, E. Malocsay","doi":"10.1016/0379-6787(91)90068-Z","DOIUrl":null,"url":null,"abstract":"<div><p>Using tandem cell test units with GaAs and GaSb concentrator cells, we have achieved a NASA verified conversion efficiency of 30.8% for space applications. Here, we describe tandem gallium cell assemblies and flex circuit tape interconnect concepts for use in practical power generating concentrator panels. The forward and reverse characteristics of tandem cell voltage-matched circuits are described. It is noted that the GaSb IR cell doubles as a bypass diode, providing shading protection for the GaAs cell.</p></div>","PeriodicalId":101172,"journal":{"name":"Solar Cells","volume":"30 1","pages":"Pages 355-361"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0379-6787(91)90068-Z","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Cells","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/037967879190068Z","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Using tandem cell test units with GaAs and GaSb concentrator cells, we have achieved a NASA verified conversion efficiency of 30.8% for space applications. Here, we describe tandem gallium cell assemblies and flex circuit tape interconnect concepts for use in practical power generating concentrator panels. The forward and reverse characteristics of tandem cell voltage-matched circuits are described. It is noted that the GaSb IR cell doubles as a bypass diode, providing shading protection for the GaAs cell.
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