Effect of Various Design Parameters on the Movement of Metallic Particles in a Three Phase Common Enclosure Gas Insulated Busduct

M. Rao, G. Kumar, J. Amarnath, S. Kamakshaiah
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引用次数: 1

Abstract

Metallic particle contamination in a compressed gas insulated busduct (GIB) or system (GIS) may lower the corona onset and breakdown voltage of the system considerably. These particles move randomly in a horizontally mounted GIB system due to the electric field, and this movement plays a crucial role in determining the insulation behavior of gas insulated substations. Under 50-Hz AC voltage, the particle motion is complex, and under appropriate conditions, the particle may cross the gaseous gap from the low-field region near the outer enclosure to the high-field region near the central conductor. For the commonly encountered size of metallic particles in practical gas insulated systems, such a crossing of the gaseous gap takes several cycles of the 50-Hz voltage. In order to determine the particle trajectories in a three-phase common enclosure gas insulated busduct (GIB) an outer enclosure of diameter 500 mm and inner conductors of diameters 64 mm spaced equilaterally are considered. Wire like particles of aluminum, copper as well as silver of a fixed geometry has been considered to be present on enclosure surface of a three-phase busduct. Simulation is carried out for movement of metallic particles in a three-phase busduct with reduced phase conductor diameter with a view to obtain optimum size of conductor for reliable operation. The work is carried out by reducing the original diameter of the conductor from 64 mm to 54 mm in steps of 5 mm.
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不同设计参数对三相共罩气体绝缘管道中金属颗粒运动的影响
压缩气体绝缘管道(GIB)或系统(GIS)中的金属颗粒污染可显著降低系统的电晕起始电压和击穿电压。由于电场的作用,这些颗粒在水平安装的GIB系统中随机运动,这种运动对气体绝缘变电站的绝缘行为起着至关重要的作用。在50hz交流电压下,粒子的运动是复杂的,在适当的条件下,粒子可能会从靠近外罩的低场区穿过气隙进入靠近中心导体的高场区。对于实际气体绝缘系统中常见的金属颗粒尺寸,这种气体间隙的穿越需要50 hz电压的几个周期。为了确定三相共罩气体绝缘管道(GIB)中的粒子轨迹,考虑了直径为500 mm的外罩和直径为64 mm的内导体的等距分布。金属线状的铝、铜和固定几何形状的银粒子被认为存在于三相导管的外壳表面。本文对减小相导体直径的三相管道中金属颗粒的运动进行了模拟,以期获得可靠运行的最佳导体尺寸。这项工作是通过将导体的原始直径从64毫米减少到54毫米,每步骤为5毫米。
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