S. K. Sethy, K. J. Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen
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引用次数: 0
Abstract
N‐ and P‐co‐ion implantation enhances the electrical conductivity of nanocrystalline diamond films to 6.9 s cm−1 and improves the microplasma illumination (MI) characteristics of the films to a low breakdown voltage of 340 V, large plasma current density of 6.3 mA cm−2 (@510 V) with plasma life‐time stability of 10 h. N ions induce nanographitic phases in the films and P ions lower the resistance at the diamond‐to‐Si interface together promoting the conducting channels for effective electron transport, consequently attaining the improved MI properties of the films.
N -和P - co - ion注入将纳米晶金刚石薄膜的电导率提高到6.9 s cm - 1，并将薄膜的微等离子体照明(MI)特性提高到340 V的低击穿电压，6.3 mA cm - 2 (@510 V)的大等离子体电流密度，等离子体寿命稳定性为10 h。N离子在薄膜中诱导纳米相，P离子降低了金刚石-硅界面的电阻，共同促进了有效电子传递的传导通道，从而提高了薄膜的MI性能。
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