Effects of BiFeO3 thickness on the write‐once‐read‐many‐times resistive switching behavior of Pt/BiFeO3/LaNiO3 heterostructure

Physica status solidi (A): Applied research Pub Date : 2023-09-08 DOI:10.1002/pssa.202300563

Yajun Fu, Wei Tang, Jin Wang, Linhong Cao

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Abstract

Thickness of the resistive switching materials is an essential factor to determine the integration density of resistive switching devices. In this work, we investigated the effect of the thickness of BFO on the WORM resistive switching behavior of Pt/BFO/LNO based devices. The thicknesses of BFO thin films are controlled in the range of 70‐220 nm. All the devices exhibited WORM resistive switching behavior with high ON/OFF ratio (∽10‐2‐10‐4), long term data retention (>3600 s), and reliable endurance (>1000 cycles). The set voltages (Vset) of the devices exhibit an approximately linear relation to the BFO thicknesses, while the highest ON/OFF ratio appears in the device with BFO thickness of 150 nm. The thickness dependent resistive switching characteristic is attributed to the variation of oxygen vacancies and OFF state resistances with the increase of BFO thickness. Our results underline the importance of the thickness of resistive switching materials for the future device applications.This article is protected by copyright. All rights reserved.

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BiFeO3厚度对Pt/BiFeO3/LaNiO3异质结构“写-一次-读-多次”电阻开关行为的影响

阻性开关材料的厚度是决定阻性开关器件集成密度的重要因素。在这项工作中，我们研究了BFO厚度对Pt/BFO/LNO基器件的WORM电阻开关行为的影响。BFO薄膜的厚度控制在70 ~ 220 nm范围内。所有器件都具有高开/关比(∽10‐2‐10‐4)、数据保持时间长(>3600 s)和可靠的持久时间(>1000次循环)的WORM电阻开关行为。器件的设定电压(Vset)与BFO厚度呈近似线性关系，而在BFO厚度为150 nm时器件的ON/OFF比率最高。随着BFO厚度的增加，氧空位和OFF态电阻随厚度的变化而变化。我们的研究结果强调了电阻开关材料厚度对未来器件应用的重要性。这篇文章受版权保护。版权所有。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Physica status solidi (A): Applied research

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