Ionic concentration sensing via nitrogen modified graphene through low-damage plasma treatment

M. Tsai, Chuan Hsuan Lin, Chi-Hsien Huang, Wen Yen Woon, Chih-Ting Lin
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Abstract

In this work, we modified the single layer graphene by nitrogen modification through the low-damage plasma treatment (LD-plasma). The electronic transport characteristics for different modified parameters under aqueous environment were performed by Agilent semiconductor analysis B1500A. We choose potassium chloride (KCl) as our electrolyte. Based on the experimental results, the Dirac point is shifted linearly with the concentration of KCl. At the same time, the experimental results also show that the behaviors of 1-min and 3-min modifications are quite different between each other because of modification to graphene structure. As a consequence, this work shows an opportunity of being an ionic sensor with the developed nitrogen-doped graphene.
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通过低损伤等离子体处理的氮修饰石墨烯离子浓度传感
本文通过低损伤等离子体处理(LD-plasma)对单层石墨烯进行氮改性。采用安捷伦半导体分析仪B1500A对不同修饰参数在水环境下的电子输运特性进行研究。我们选择氯化钾(KCl)作为电解质。实验结果表明,狄拉克点随KCl浓度的变化呈线性位移。同时,实验结果还表明,由于对石墨烯结构的修饰,1分钟和3分钟改性的行为有很大的不同。因此,这项工作显示了利用已开发的氮掺杂石墨烯作为离子传感器的机会。
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