SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE

S. Utamuradova, S. Muzafarova
{"title":"SERIAL RESISTANCE OF PHOTOCONVERTERS SNO2/PCDTE, ITO/PCDTE И IN2O3/PCDTE BASED ON CADMIUM TELLURIDE","authors":"S. Utamuradova, S. Muzafarova","doi":"10.31618/esu.2413-9335.2021.1.93.1550","DOIUrl":null,"url":null,"abstract":"The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.","PeriodicalId":11879,"journal":{"name":"EurasianUnionScientists","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EurasianUnionScientists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31618/esu.2413-9335.2021.1.93.1550","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The operational parameters and efficiency of the SnO2 / pCdTe, ITO / pCdTe and In2O3 / pCdTe photoconverters have been investigated. The real values of the series resistance of the structures under study have been determined. In film photoconverters, a significant contribution to the series resistance is made by the resistance of the transition dielectric layer of tellurium oxide TeO2 between the semiconductor and the resistance between the rear ohmic contact of the structures.
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基于碲化镉的光电转换器sno2 / pcdte、ito / pcdte串联电阻И in2o3 / pcdte
研究了SnO2 / pCdTe、ITO / pCdTe和In2O3 / pCdTe光转换器的工作参数和效率。确定了所研究结构串联电阻的实际值。在薄膜光电变换器中,对串联电阻有重要贡献的是半导体之间的氧化碲TeO2过渡介电层的电阻和结构的后欧姆接触之间的电阻。
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