Synthesis and characterization of nanostructured CdZnSSe thin films by arrested precipitation technique (APT)

S. K. Jagadale, R. Mane, P. N. Bhosale, R. Mane
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Abstract

In the present investigation efforts are made to prepare CdZnSSechalcogenide thin films by simple, cost effective arrested precipitation technique (APT). The films were obtained in a chemical bath maintained at 55±5°C temperature, pH 10.8±0.2 and deposition time 90 min. The obtained thin films were thoroughly characterized paying particular attention to their structural, compositional, morphological and optical properties. The surface morphology and composition of as deposited thin films are studied by using Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Spectroscopy (EDS). SEM micrographs reveal non- uniform distribution and nearly spherical grains. The X-ray diffraction pattern showed that highly textured CdZnSSe films with hexagonal structure. The optical absorption spectra show band gap value 2.12 eV.
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纳米结构CdZnSSe薄膜的阻滞沉淀(APT)合成与表征
本文研究了一种简单、经济的拘阻沉淀法(APT)制备碲化镉(cdznssechalgenide)薄膜。在温度55±5°C, pH 10.8±0.2,沉积时间90 min的化学浴中获得薄膜。对所获得的薄膜进行了全面的表征,特别注意其结构,成分,形态和光学性质。利用扫描电子显微镜(SEM)和x射线能谱仪(EDS)研究了沉积薄膜的表面形貌和组成。扫描电镜显示晶粒分布不均匀,晶粒接近球形。x射线衍射图显示,CdZnSSe薄膜具有高度织构的六边形结构。光学吸收光谱显示带隙值为2.12 eV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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