Towards improving the etch performance of KrF excimer laser micromachining on silicon material

M. Zainol, S. Johari, H. Fazmir, A. Anuar, Y. Wahab, M. Mazalan
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Abstract

Excimer laser micromachining enables us to overcome the conventional lithography-based microfabrication limitations and simplify the process of creating three dimensional (3D) microstructures. The objective of these study are to investigate the relation between frequency (f), number of laser pulse (P), fluence (F) and their etch performance. This paper presents a parametric characterization study on silicon using KrF excimer laser micromachining. From the result, the etch rate change were recorded as the three major laser parameters (frequency, number of pulse and fluence) were varied. From the results, we found that the fluence has the highest influence on silicon etching rate due to factors of photothermal and photochemical, while frequency and the number of laser pulses do not change the energy.
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提高KrF准分子激光微加工硅材料刻蚀性能的研究
准分子激光微加工使我们能够克服传统的基于光刻的微加工限制,并简化了创建三维(3D)微结构的过程。本研究的目的是探讨频率(f)、激光脉冲数(P)、影响(f)与蚀刻性能之间的关系。本文采用KrF准分子激光微加工技术对硅进行了参数化表征。从结果中记录了三个主要激光参数(频率、脉冲数和通量)的变化对蚀刻速率的影响。从结果中我们发现,由于光热和光化学因素的影响,影响硅蚀刻速率的影响最大,而激光脉冲频率和脉冲数对能量没有影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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