Intervalley overflow of electrons in heavily doped silicon

Abstract

A computer simulation of the effect of overflow of electrons between conduction band minima of n-type silicon is carried out. On the basis of the numerical solution of the equation, the neutrality association of Fermi level position and electron concentration in minima are obtained at major monoaxial strain. The obtained results can be used for simulation of charge carrier transport in strained layers of Ge/sub x/Si/sub 1-x/ alloys.