Application of OPE Master for critical layer OPE matching

Yuan Tao, Yifei Liu, Yuanzhao Ma, Zhenyu Yang, Chun Shao, Xuedong Fan, J. Ikeda, K. Fujii
{"title":"Application of OPE Master for critical layer OPE matching","authors":"Yuan Tao, Yifei Liu, Yuanzhao Ma, Zhenyu Yang, Chun Shao, Xuedong Fan, J. Ikeda, K. Fujii","doi":"10.1109/CSTIC.2017.7919756","DOIUrl":null,"url":null,"abstract":"Tool-to-tool matching of optical proximity effect (OPE) properties is required and the procedure is called OPE matching. Nikon has developed a software called OPE Master for the purpose, which can decrease OPE errors with emphasis placed on critical dimension (CD) errors by optimizing exposure tool's parameters, such as lens numerical aperture (LNA), pupilgram intensity distribution, pupilgram distortion. Thanks to its high affinity to the Nikon NSR series scanners, the software ensures higher accuracies and short turn-around-time (TAT) as it can directly communicate with exposure tools. One secondary benefit of such bilateral communication is that it can realize high data security as we have no need to send data used during OPE matching to the outside of the fab. In this paper, we are going to introduce OPE Master and report one successful use case. which is a critical layer in 55nm node in which OPE errors has been improved by about 33% which is well within the goal of the process requirements.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"10 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Tool-to-tool matching of optical proximity effect (OPE) properties is required and the procedure is called OPE matching. Nikon has developed a software called OPE Master for the purpose, which can decrease OPE errors with emphasis placed on critical dimension (CD) errors by optimizing exposure tool's parameters, such as lens numerical aperture (LNA), pupilgram intensity distribution, pupilgram distortion. Thanks to its high affinity to the Nikon NSR series scanners, the software ensures higher accuracies and short turn-around-time (TAT) as it can directly communicate with exposure tools. One secondary benefit of such bilateral communication is that it can realize high data security as we have no need to send data used during OPE matching to the outside of the fab. In this paper, we are going to introduce OPE Master and report one successful use case. which is a critical layer in 55nm node in which OPE errors has been improved by about 33% which is well within the goal of the process requirements.
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OPE Master在关键层OPE匹配中的应用
光学邻近效应(optical proximity effect, OPE)特性需要工具对工具的匹配,这一过程称为光学邻近效应匹配。尼康为此开发了一款名为OPE Master的软件,通过优化曝光工具的参数,如镜头数值孔径(LNA)、瞳孔强度分布、瞳孔畸变等,可以减少OPE误差,重点放在关键尺寸(CD)误差上。由于其对尼康NSR系列扫描仪的高度亲和力,该软件可以确保更高的精度和更短的周转时间(TAT),因为它可以直接与曝光工具通信。这种双边通信的第二个好处是它可以实现高数据安全性,因为我们不需要将OPE匹配期间使用的数据发送到晶圆厂外部。在本文中,我们将介绍OPE Master并报告一个成功的用例。这是55nm节点的关键层,其OPE误差提高了约33%,完全符合工艺要求的目标。
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