C. Wei, A. Klimashov, Y. Zhu, E. Lawrence, G. Tkachenko
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引用次数: 7
Abstract
In this paper, we present a comprehensive large-signal PHEMT switch model and address critical switch modeling issues. Reciprocity, dispersion, leakages, and sub-pinchoff, and charge conservation all play important role in generating a realistic large-signal switch model. Device nonlinearities covering linear, saturation, sub-pinchoff and deep pinchoff regions are taken into account in the model. The model has been verified by comparing simulated dc characteristics, S-parameters and power harmonics performance of switch devices with measured results. The model also successfully predicts harmonics, two-tone IP3 and cross-modulation in various switch circuits.
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