Electrical Properties of n-CdSe/Si-p Junction Prepared by Chemical Bath Deposition Technique, from Different Weights of Sodium Selenosulfate and Constant Molarity

Abstract

A pn-junction was successfully fabricated by depositing n-type CdSe thin films on p-type Si as a substrate using chemical bath deposition technique (CBD) at 70 o C. Time of deposition was 6 hours and the preparing solution was changed every 2 hours during the deposition. Sodium Selenosulfate (with different weights) is the source of Se -2 ions, cadmium nitrate is the source of Cd +2 ions. The (I-V) characteristics for the n-CdSe/p-Si junction show it behaves as a Zener diode in reverse bias, with Zener resistance (3 and 27×10 3 )  . SEM also shows spherical-shape particles with difference grain size (3.8 and 19.8) nm.