A brief review of low-temperature graphene growth via chemical vapor deposition

Jun-Hui Choi, Jaehee Lee
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Abstract

Graphene, a one-atom-thick crystal of carbon, has attracted tremendous attention for various electrical and energy applications due to its superior physical and chemical properties. Among various graphene synthetic approaches, the CVD method has been considered a promising way to obtain high-quality graphene in large-scale. However, to obtain high-quality graphene by a typical CVD process, a high temperature of 1000 ℃ or higher should be required to decompose the hydrocarbon precursors, which is a major obstacle to the commercialization of CVD-graphene. Recently, enormous research has been conducted to grow high-quality graphene at a low temperature using various hydrocarbon precursors and external energy sources. Here, we briefly review recent research progress in the low-temperature growth of graphene using CVD methods. In addition, we introduce representative electronic applications based on low-temperature CVD-graphene.
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化学气相沉积法生长低温石墨烯的研究进展
石墨烯是一种单原子厚度的碳晶体,由于其优越的物理和化学性质,在各种电气和能源应用中引起了极大的关注。在各种石墨烯合成方法中,气相沉积法被认为是一种有前景的大规模制备高质量石墨烯的方法。然而,典型的CVD工艺要获得高质量的石墨烯,烃类前驱体需要在1000℃或更高的温度下分解,这是CVD-石墨烯商业化的主要障碍。最近,人们进行了大量的研究,利用各种碳氢化合物前体和外部能源在低温下生长高质量的石墨烯。本文简要综述了近年来利用气相沉积法低温生长石墨烯的研究进展。此外,我们还介绍了基于低温cvd -石墨烯的代表性电子应用。
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