ppb Sensing Level Hydrogen Sulphide at Room Temperature Using Indium Oxide Gas Sensors

A. A. Shboul, Andy Shih, M. Oukachmih, R. Izquierdo
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引用次数: 4

Abstract

Hydrogen sulphide (H2S) sensors were prepared from mixtures of indium oxide (In2O3), graphite flakes (Gt) and polystyrene (PS). These sensors were found to be highly sensitive to as low as 100 ppb of H2S gas at room temperature and showed high resistance to humidity changes up to relative humidity (RH~93%). The sensor’s performance when exposed to air and H2S gas reveals the sensing mechanism of In2O3 films to H2S at room temperature depends mainly on the partial sulfuration of In2O3 by H2S gas.
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ppb感应水平硫化氢在室温下使用氧化铟气体传感器
采用氧化铟(In2O3)、石墨薄片(Gt)和聚苯乙烯(PS)的混合物制备了硫化氢(H2S)传感器。这些传感器在室温下对低至100 ppb的H2S气体高度敏感,并且对相对湿度(RH~93%)的湿度变化具有很高的抵抗力。传感器暴露于空气和H2S气体时的性能表明,室温下In2O3薄膜对H2S的传感机制主要取决于H2S气体对In2O3的部分硫化。
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