{"title":"Balun bandpass filter with wide upper stopband using silicon-based integrated passive device technology","authors":"Chia-Feng Chang, Yo-Shen Lin","doi":"10.1109/IMWS-AMP.2015.7324914","DOIUrl":null,"url":null,"abstract":"In this work, a compact transformer-coupled balun bandpass filter is presented. The proposed balun bandpass filter features a compact chip size, and it can be designed according to the desired bandpass response and reference impedance. Specifically, a balun bandpass filter with 3rd-order bandpass response is demonstrated using the silicon-based integrated passive device process. The chip size is 2.5 mm×1.8 mm for a center frequency f0 of 2.4 GHz and a bandwidth of about 11.5%. The corresponding electrical size is only about 0.020λ0 × 0.014λ0 at 2.4 GHz. In addition, a wide 40-dB upper stopband from 3.76 up to 14 GHz is achieved.","PeriodicalId":6625,"journal":{"name":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"8 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2015-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP.2015.7324914","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, a compact transformer-coupled balun bandpass filter is presented. The proposed balun bandpass filter features a compact chip size, and it can be designed according to the desired bandpass response and reference impedance. Specifically, a balun bandpass filter with 3rd-order bandpass response is demonstrated using the silicon-based integrated passive device process. The chip size is 2.5 mm×1.8 mm for a center frequency f0 of 2.4 GHz and a bandwidth of about 11.5%. The corresponding electrical size is only about 0.020λ0 × 0.014λ0 at 2.4 GHz. In addition, a wide 40-dB upper stopband from 3.76 up to 14 GHz is achieved.