A Delay-variation-aware High-level Synthesis Algorithm for RDR Architectures

Yuta Hagio, M. Yanagisawa, N. Togawa
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引用次数: 5

Abstract

As device feature size drops, interconnection delays often exceed gate delays. We have to incorporate interconnection delays even in high-level synthesis. Using RDR architectures is one of the effective solutions to this problem. At the same time, process and delay variation also becomes a serious problem which may result in several timing errors. How to deal with this problem is another key issue in high-level synthesis. In this paper, we propose a delay-variation-aware high-level synthesis algorithm for RDR architectures. We first obtain a non-delayed scheduling/binding result and, based on it, we also obtain a delayed scheduling/binding result. By adding several extra functional units to vacant RDR islands, we can have a delayed scheduling/binding result so that its latency is not much increased compared with the non-delayed one. After that, we similarize the two scheduling/binding results by repeatedly modifying their results. We can finally realize non-delayed and delayed scheduling/binding results simultaneously on RDR architecture with almost no area/performance overheads and we can select either one of them depending on post-silicon delay variation. Experimental results show that our algorithm successfully reduces delayed scheduling/binding latency by up to 42.9% compared with the conventional approach.
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面向RDR体系结构的延迟变化感知高级综合算法
随着器件特征尺寸的减小,互连延迟通常超过门延迟。即使在高级合成中,我们也必须考虑互连延迟。使用RDR架构是解决这个问题的有效方法之一。与此同时,过程和延迟的变化也成为一个严重的问题,可能导致一些时序误差。如何处理这一问题是高级综合的另一个关键问题。在本文中,我们提出了一种用于RDR体系结构的延迟变化感知高级综合算法。我们首先得到一个非延迟的调度/绑定结果,并在此基础上得到一个延迟的调度/绑定结果。通过向空闲的RDR岛添加几个额外的功能单元,我们可以获得延迟的调度/绑定结果,因此与非延迟的调度/绑定结果相比,延迟不会增加太多。之后,我们通过反复修改两个调度/绑定结果来使它们相似。我们最终可以在RDR架构上同时实现非延迟和延迟调度/绑定结果,几乎没有面积/性能开销,我们可以根据后硅延迟变化选择其中任何一个。实验结果表明,与传统方法相比,该算法成功地将延迟调度/绑定延迟降低了42.9%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IPSJ Transactions on System LSI Design Methodology
IPSJ Transactions on System LSI Design Methodology Engineering-Electrical and Electronic Engineering
CiteScore
1.20
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0.00%
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