“Generation III” Piezoelectric Single Crystals Developed by Solid-State Single Crystal Growth Method

Ho-yong Lee
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引用次数: 2

Abstract

Crystallographically engineered Relaxor-PT single crystals, specifically PMN-PT (Generation I) and PIN-PMN-PT/PMN-PZT (Generation II), offer much higher piezoelectric and electromechanical coupling coefficients (d33>1,500 pC/N, k33>0.9), when compared to polycrystalline PZT-5H ceramics (d33>600 pC/N, k33>0.75). Recently Ceracomp Co., Ltd. (www.ceracomp.com) has developed the solid-state single crystal growth (SSCG) technique and successfully fabricated Gen III PMN-PZT single crystals modified with acceptors or donors. The piezoelectric constants (d33) of (001) Gen III PMN-PZT single crystals were measured to be higher than 4,000 pC/N and thus about two times higher than those of PMN-PT/PZN-PT (Gen I) and PIN-PMN-PT/PMN-PZT (Gen II) single crystals. The Gen III PMN-PZT single crystals have been firstly applied to single crystal-epoxy composites, ultrasonic transducers, piezoelectric sensors, and piezoelectric actuators. In this paper we introduce the development of Gen III PMN-PZT single crystals, piezoelectric composites and multilayer single crystal actuators.
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采用固态单晶生长法研制“第三代”压电单晶
晶体学工程的Relaxor-PT单晶,特别是PMN-PT(第一代)和PIN-PMN-PT/PMN-PZT(第二代),与PZT-5H多晶陶瓷(d33>600 pC/N, k33>0.75)相比,具有更高的压电和机电耦合系数(d33> 1500 pC/N, k33>0.9)。最近,Ceracomp有限公司(www.ceracomp.com)开发了固态单晶生长(SSCG)技术,并成功制备了用受体或供体修饰的第三代PMN-PZT单晶。(001) III代PMN-PZT单晶的压电常数(d33)高于4000 pC/N,比PMN-PT/PZN-PT (Gen I)和PIN-PMN-PT/PMN-PZT (Gen II)单晶的压电常数(d33)高出约2倍。第三代PMN-PZT单晶已首次应用于单晶环氧复合材料、超声波换能器、压电传感器和压电致动器。本文介绍了第三代PMN-PZT单晶、压电复合材料和多层单晶作动器的研究进展。
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