The effect of aluminum nanoparticle on the seebeck coefficient of biomedical thermoelectric devices

A. H. Azaddin, R. M. Ayub, A. H. Azman, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, S. Gopinath, C. Voon, K. L. Foo
{"title":"The effect of aluminum nanoparticle on the seebeck coefficient of biomedical thermoelectric devices","authors":"A. H. Azaddin, R. M. Ayub, A. H. Azman, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, S. Gopinath, C. Voon, K. L. Foo","doi":"10.1109/RSM.2015.7355034","DOIUrl":null,"url":null,"abstract":"The Seebeck coefficient is a parameter to measure the efficiency of materials in generating thermoelectric voltage from certain temperature gradient. In this work, the effect of aluminum nano particle on the Seebeck coefficient for silicon based thermoelectric power generator is investigated. Thermoelectric devices which consist of arrays of doped phosphorus and boron channels have been fabricated on silicon wafers via standard CMOS fabrication processes. Aluminum nano particles were then integrated into the doped n-channel, before the fabrication step is completed with the metalization process. Temperature gradients across the two device terminals were created by resistive heating and the output voltages were measured. The results show that there is a substantial improvement in the calculated Seebeck coefficient where the device which been incorporated with 40 nm aluminum nano particles yields the average value of 3390 μV/K to that of control device which yields 784 μV/K. Furthermore, the output voltage is measured to be in the range of 40 mV for the temperature gradient of 12 K, making it to be very viable and attractive for biomedical applications.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"98 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RSM.2015.7355034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The Seebeck coefficient is a parameter to measure the efficiency of materials in generating thermoelectric voltage from certain temperature gradient. In this work, the effect of aluminum nano particle on the Seebeck coefficient for silicon based thermoelectric power generator is investigated. Thermoelectric devices which consist of arrays of doped phosphorus and boron channels have been fabricated on silicon wafers via standard CMOS fabrication processes. Aluminum nano particles were then integrated into the doped n-channel, before the fabrication step is completed with the metalization process. Temperature gradients across the two device terminals were created by resistive heating and the output voltages were measured. The results show that there is a substantial improvement in the calculated Seebeck coefficient where the device which been incorporated with 40 nm aluminum nano particles yields the average value of 3390 μV/K to that of control device which yields 784 μV/K. Furthermore, the output voltage is measured to be in the range of 40 mV for the temperature gradient of 12 K, making it to be very viable and attractive for biomedical applications.
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纳米铝颗粒对医用热电器件塞贝克系数的影响
塞贝克系数是衡量材料在一定温度梯度下产生热电电压效率的参数。本文研究了纳米铝颗粒对硅基热电发电机塞贝克系数的影响。采用标准的CMOS工艺在硅片上制备了由掺杂磷和硼通道阵列组成的热电器件。然后将铝纳米颗粒集成到掺杂的n通道中,然后通过金属化工艺完成制造步骤。通过电阻加热产生两个器件终端的温度梯度,并测量输出电压。结果表明,采用40 nm铝纳米粒子的器件的平均塞贝克系数为3390 μV/K,比对照器件的平均塞贝克系数为784 μV/K有较大提高。此外,在12 K的温度梯度下,测量的输出电压在40 mV范围内,这使得它在生物医学应用中非常可行和有吸引力。
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