Wang Jian, Yanbin Shen, S. Luo, Wenhu Yang, Shuhui Yu, R. Sun, C. Wong
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引用次数: 0
Abstract
The nonlinear I-V behavior of the three-phase SiC/CNTs/epoxy composites for high voltage field grading application was investigated, and a composite bulk hopping mechanism was proposed. It is hypothesized that nearest-neighbor electronic hopping occurs through thin epoxy layers between CNTs and SiC particles, and an asymmetric rectangular potential barrier structure is the mechanism governing the nonlinear electric response of the three-phase SiC/CNTs/epoxy composites. Compared with CNTs/epoxy, the I-V behavior of the three-phase SiC/CNTs/epoxy composites exhibited much better reproducibility.
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