Solid state reaction of Ni thin film on n-InP susbtrate for III-V laser contact technology

E. Ghegin, F. Nemouchi, J. Lábár, S. Favier, C. Perrin, K. Hoummada, S. Gurbán, P. Gergaud
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Abstract

The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. After RTP and long in situ annealing treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. Kinetics and nucleation phenomena were highlighted by the precipitation of In during the RTP.
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III-V激光接触技术中Ni薄膜在n-InP衬底上的固相反应
研究了Ni/n-InP体系的冶金性能。我们报道了在直流溅射金属沉积过程中形成成分不均匀的Ni-In-P非晶层,其中包括Ar+清洗。经过RTP和长时间原位退火处理,观察到Ni2P、Ni3P二相和Ni2InP三元相同时出现。在RTP过程中,In的析出突出了动力学和成核现象。
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