A highly reconfigurable 65nm CMOS RF-to-bits transceiver for full-band multicarrier TDD/FDD 2G/3G/4G/5G macro basestations

David J. McLaurin, K. Gard, Richard P. Schubert, M. Manglani, Haiyang Zhu, D. Alldred, Zhao Li, Steve Bal, Jianxun Fan, Oliver E. Gysel, Chris Mayer, T. Montalvo
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引用次数: 28

Abstract

This paper presents a 65nm 2-TX, 2-RX RF-to-bits basestation transceiver with 200MHz large-signal BW and 450MHz DPD synthesis/observation BW, and LO frequencies from 400MHz to 6GHz. For FDD operation the TRX supports a low-IF mode that meets the dynamic range requirements of GSM basestations. It provides full-band multicarrier (MC) operation in all TDD/FDD 3GPP bands for 2G/3G/4G/5G radios. The SoC includes an 8×16Gb/s SERDES interface, two receivers, two transmitters, and a digital pre-distortion (DPD) feedback RX (FBRX) (Fig. 9.3.1). The FBRX employs a “stitching” system that combines the outputs of both RX basebands to provide 450MHz of observation BW. Three PLLs provide the digital/converter/SERDES clocks, a calibration LO, and an RF LO that meets GSM TX phase-noise requirements. Digital interpolation, decimation, AGC, TX Power control, and calibrations are managed by an integrated ARM Cortex M3. Internal calibration timing is adaptable to support 3G/4G/5G subframe timing requirements. The SoC is a single-chip solution for TDD, and a two-chip set for FDD. GSM requires an external Lo for the RX. Power dissipation in the maximum BW mode (2T/2R/1FBRX, 450/200/450MHz, 0dB RF attenuation, 50% TX/RX duty cycle for TDD) is 4.1W for TDD and 6.6W for FDD.
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一款高度可重构的65nm CMOS射频到位收发器,适用于全频带多载波TDD/FDD 2G/3G/4G/5G宏基站
本文提出了一种65nm 2-TX, 2-RX射频到比特基站收发器,具有200MHz大信号BW和450MHz DPD合成/观测BW, LO频率为400MHz ~ 6GHz。对于FDD操作,TRX支持低中频模式,满足GSM基站的动态范围要求。它在所有TDD/FDD 3GPP频段为2G/3G/4G/5G无线电提供全频段多载波(MC)操作。SoC包括一个8×16Gb/s SERDES接口、两个接收器、两个发射器和一个数字预失真(DPD)反馈RX (FBRX)(图9.3.1)。FBRX采用“拼接”系统,将两个RX基带的输出结合起来,提供450MHz的观测BW。三个锁相环提供数字/转换器/SERDES时钟,一个校准LO和一个满足GSM TX相位噪声要求的RF LO。数字插值,抽取,AGC, TX功率控制和校准由集成的ARM Cortex M3管理。内部校准时序适应支持3G/4G/5G子帧时序要求。该SoC为TDD提供单芯片解决方案,为FDD提供双芯片解决方案。GSM需要RX的外部Lo。最大BW模式(2T/2R/1FBRX, 450/200/450MHz, 0dB RF衰减,TDD为50% TX/RX占空比)的功耗为4.1W, FDD为6.6W。
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