{"title":"An Accurate Physical Based Transport Model of Gate-All-Around InxGa1–xAs Nanowire MOSFET Using Gaussian-Like Transmission Co-Efficient","authors":"M. Islam, M. A. Masud, Q. Khosru","doi":"10.1166/MAT.2018.1507","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":18271,"journal":{"name":"Materials Focus","volume":"20 1","pages":"268-272"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Focus","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1166/MAT.2018.1507","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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