Synthesis of Nano/Meso-Structured Silicon Films by Plasma Deposition

William W. Hernández-Montero, C. Zuñiga-Islas, F. J. D. L. Hidalga-Wade, W. Calleja-Arriaga, A. Itzmoyotl-Toxqui
{"title":"Synthesis of Nano/Meso-Structured Silicon Films by Plasma Deposition","authors":"William W. Hernández-Montero, C. Zuñiga-Islas, F. J. D. L. Hidalga-Wade, W. Calleja-Arriaga, A. Itzmoyotl-Toxqui","doi":"10.1557/OPL.2016.51","DOIUrl":null,"url":null,"abstract":"The characteristics of silicon films deposited by plasma depend strongly on the reactor parameters. In our experiments, the two-level factorial design was implemented. Pressure, silane and hydrogen flows were set at high and low values for the synthesis of silicon films. Results showed that the flows of silane and hydrogen played a key role, being the influence of pressure low. In particular, the samples at high level of hydrogen exhibited the lowest deposition rate and photosensitivity. On the other hand, the samples at low level of hydrogen showed crystalline regions and high deposition rate. For the lowest dilution ratio, nano/meso-structured silicon films were obtained, showing high photosensitivity and high roughness that increases the scattering of light. These characteristics of our films make them suitable to be used in photovoltaics.","PeriodicalId":18884,"journal":{"name":"MRS Proceedings","volume":"53 22 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2016-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"MRS Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1557/OPL.2016.51","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The characteristics of silicon films deposited by plasma depend strongly on the reactor parameters. In our experiments, the two-level factorial design was implemented. Pressure, silane and hydrogen flows were set at high and low values for the synthesis of silicon films. Results showed that the flows of silane and hydrogen played a key role, being the influence of pressure low. In particular, the samples at high level of hydrogen exhibited the lowest deposition rate and photosensitivity. On the other hand, the samples at low level of hydrogen showed crystalline regions and high deposition rate. For the lowest dilution ratio, nano/meso-structured silicon films were obtained, showing high photosensitivity and high roughness that increases the scattering of light. These characteristics of our films make them suitable to be used in photovoltaics.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
等离子沉积法制备纳米/介观结构硅薄膜
等离子体沉积的硅膜的特性很大程度上取决于反应器的参数。在我们的实验中,我们采用了两水平析因设计。硅膜合成的压力、硅烷流量和氢流量分别设定为高、低值。结果表明,硅烷和氢的流动是影响反应速率的关键因素。特别是在高氢浓度下,样品的沉积速率和光敏性最低。另一方面,低氢水平下的样品呈现出结晶区,沉积速率高。在最低稀释比下,得到纳米/介观结构硅薄膜,具有高光敏性和高粗糙度,增加了光的散射。这些特性使我们的薄膜适合用于光伏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Nucleation and dynamics of dislocations in mismatched heterostructures Ceramics at the Emergence of the Silk Road: A Case of Village Potters from Southeastern Kazakhstan during the Late Iron Age The Potential of Low Frequency EPR Spectroscopy in Studying Pottery Artifacts and Pigments. Characterization of Bistre Pigment Samples by FTIR, SERS, Py-GC/MS and XRF Dual-Beam Scanning Electron Microscope (SEM) and Focused Ion Beam (FIB): A Practical Method for Characterization of Small Cultural Heritage Objects
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1