{"title":"Exploiting Binary Equilibrium for Efficient LDPC Decoding in 3D NAND Flash","authors":"Hsiang-Sen Hsu, Li-Pin Chang","doi":"10.1109/RTCSA55878.2022.00018","DOIUrl":null,"url":null,"abstract":"3D NAND flash is prone to bit errors due to severe charge leakage. Modern SSDs adopt LDPC for bit error management, but LDPC can incur a high read latency through iterative adjustment to the reference voltage. Bit scrambling helps reduce inter-cell interference, and with it, ones and zeros equally contribute to raw data. We observed that as bit errors develop, the 0-bit ratio in raw data deviates from 50%. Inspired by this property, we propose a method for fast adjustment to the reference voltage, involving a placement step and a fine-tuning step. Our method uses only a few hundreds of bytes of RAM but improves the average read latency upon existing methods by up to 24%.","PeriodicalId":38446,"journal":{"name":"International Journal of Embedded and Real-Time Communication Systems (IJERTCS)","volume":"94 1","pages":"113-119"},"PeriodicalIF":0.5000,"publicationDate":"2022-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Embedded and Real-Time Communication Systems (IJERTCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RTCSA55878.2022.00018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"COMPUTER SCIENCE, SOFTWARE ENGINEERING","Score":null,"Total":0}
引用次数: 2
Abstract
3D NAND flash is prone to bit errors due to severe charge leakage. Modern SSDs adopt LDPC for bit error management, but LDPC can incur a high read latency through iterative adjustment to the reference voltage. Bit scrambling helps reduce inter-cell interference, and with it, ones and zeros equally contribute to raw data. We observed that as bit errors develop, the 0-bit ratio in raw data deviates from 50%. Inspired by this property, we propose a method for fast adjustment to the reference voltage, involving a placement step and a fine-tuning step. Our method uses only a few hundreds of bytes of RAM but improves the average read latency upon existing methods by up to 24%.