G. Niu, W. Chien, Jack Chen, Dennis Zhang, Susie Yu, Daniel Zhao, Silvia Duan, Ming Li, Alicia Ding
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引用次数: 0
Abstract
Package Level Threshold Voltage Stability (VTS) evaluation on PMOS has emerged as one of the critical reliability concerns in deep sub-micron devices. In this paper, we present a novel method to fast measure VTS at wafer level. Our result shows that changing the Source/Drain IMP species can improve the VTS of a 0.13um Flash.
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