Structural-phase junctions in the system of Pt–Si during rapid thermal treatment

U. Pilipenka, F. Komarov, V. Saladukha, V. A. Harushka
{"title":"Structural-phase junctions in the system of Pt–Si during rapid thermal treatment","authors":"U. Pilipenka, F. Komarov, V. Saladukha, V. A. Harushka","doi":"10.29235/1561-8323-2020-64-2-238-244","DOIUrl":null,"url":null,"abstract":"In recent years the interest to silicides significantly rose relating to their huge potentialities as the material of the low-Ohm contacts and interconnections of metallization of the silicon integrated circuits. In view of this the necessity appeared to consider more extensively the thermal dynamic, electric and structural peculiarities of their formation. Purpose of the work was in investigation of influence of the rapid thermal treatment on the structural –phase junctions in the system of Pt–Si during formation of platinum silicide. As samples, the Pt films were used, 43.7 nm thick and applied on the substrates of the mono-crystal silicon KEF КЭФ 0.5 with orientation (111) by means of the magnetron sputtering of the platinum target with purity of 99.95 % on the unit MRS 603 with the cryogenic pumping to the pressure not worse, than 5 · 10–5 Pa. As the operating medium, argon was used, whose purity constituted 99.933 %. Rapid thermal treatment was performed in the nitrogen medium within the temperature range from 200 to 550 °С with a step of 50 °С and the time period of 7 s. The process of interaction of platinum with silicon during treatment of the Pt–Si system was evaluated by means of the analysis of the RBS spectra. It is demonstrated, that within the temperature range of 200 °С ≤ Т ≤ 300 °С during 7 s of the rapid thermal process on the boundary of the metal film with the substrate, formation takes place of the Pt2Si layer owing to diffusion of the Pt atoms into silicon via the layer of the growing silicide. The temperature Т = 300 °С is peculiar for the complete application of the Pt film during 7 s in process of the silicide formation of the single phase system of Pt2Si. At 350 °С ≤ Т < 450 °С formation is registered of the double phase system of Pt2Si → PtSi, starting from the inter-phase boundary of Si/Pt2Si predominantly owing to the opposite diffusion of the Si atoms into the layer of Pt2Si. The temperature of the rapid thermal treatment Т = 450 °С marks formation of the thermally stable balanced structure of PtSi along the entire silicide thickness, which is 50–100 °С lower and considerably more rapid, than during the long-term balanced thermal treatment.","PeriodicalId":11283,"journal":{"name":"Doklady of the National Academy of Sciences of Belarus","volume":"48 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2020-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Doklady of the National Academy of Sciences of Belarus","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29235/1561-8323-2020-64-2-238-244","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In recent years the interest to silicides significantly rose relating to their huge potentialities as the material of the low-Ohm contacts and interconnections of metallization of the silicon integrated circuits. In view of this the necessity appeared to consider more extensively the thermal dynamic, electric and structural peculiarities of their formation. Purpose of the work was in investigation of influence of the rapid thermal treatment on the structural –phase junctions in the system of Pt–Si during formation of platinum silicide. As samples, the Pt films were used, 43.7 nm thick and applied on the substrates of the mono-crystal silicon KEF КЭФ 0.5 with orientation (111) by means of the magnetron sputtering of the platinum target with purity of 99.95 % on the unit MRS 603 with the cryogenic pumping to the pressure not worse, than 5 · 10–5 Pa. As the operating medium, argon was used, whose purity constituted 99.933 %. Rapid thermal treatment was performed in the nitrogen medium within the temperature range from 200 to 550 °С with a step of 50 °С and the time period of 7 s. The process of interaction of platinum with silicon during treatment of the Pt–Si system was evaluated by means of the analysis of the RBS spectra. It is demonstrated, that within the temperature range of 200 °С ≤ Т ≤ 300 °С during 7 s of the rapid thermal process on the boundary of the metal film with the substrate, formation takes place of the Pt2Si layer owing to diffusion of the Pt atoms into silicon via the layer of the growing silicide. The temperature Т = 300 °С is peculiar for the complete application of the Pt film during 7 s in process of the silicide formation of the single phase system of Pt2Si. At 350 °С ≤ Т < 450 °С formation is registered of the double phase system of Pt2Si → PtSi, starting from the inter-phase boundary of Si/Pt2Si predominantly owing to the opposite diffusion of the Si atoms into the layer of Pt2Si. The temperature of the rapid thermal treatment Т = 450 °С marks formation of the thermally stable balanced structure of PtSi along the entire silicide thickness, which is 50–100 °С lower and considerably more rapid, than during the long-term balanced thermal treatment.
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快速热处理Pt-Si体系中的结构-相结
近年来,由于硅化物作为低欧姆触点和硅集成电路金属化互连材料的巨大潜力,人们对它们的兴趣显著上升。鉴于此,似乎有必要更广泛地考虑其形成的热动力学、电学和结构特性。研究了在铂硅化物形成过程中,快速热处理对Pt-Si体系结构相结的影响。以43.7 nm厚的铂薄膜为样品,采用磁控溅射法制备了纯度为99.95%的铂靶,并在MRS 603装置上低温泵送至不低于5·10-5 Pa的压力下,将铂薄膜涂在取向为(111)的单晶硅KEF КЭФ 0.5衬底上。操作介质为氩气,其纯度为99.933%。在氮气介质中进行快速热处理,温度范围为200 ~ 550°С,步长为50°С,时间为7 s。通过光谱分析,评价了铂-硅体系处理过程中铂与硅的相互作用过程。结果表明,在金属膜与衬底边界的快速热过程的7 s内,在200°С≤Т≤300°С的温度范围内,由于Pt原子通过生长的硅化物层扩散到硅中,形成了Pt2Si层。温度Т = 300°С是Pt2Si单相体系硅化物形成过程中7 s内Pt薄膜完全应用的特殊温度。在350°С≤Т < 450°С处,由于Si原子向Pt2Si层反向扩散,从Si/Pt2Si的相间边界开始,形成了Pt2Si→PtSi的双相体系。快速热处理温度Т = 450°С标志着PtSi沿整个硅化物厚度的热稳定平衡结构的形成,比长期平衡热处理温度低50-100°С且速度快得多。
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