Ultrafast carrier thermalization dynamics in amorphous semiconductor materials

Liu, Zhang, Young, Dexheimer, Nelson
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Abstract

Summary form only given. Amorphous semiconductors are of interest for both their technological applications and the underlying physics of the unusual properties that result from the departure from crystalline order. Amorphous silicon in particular has become the prototype material for understanding the electronic properties of disordered systems. Previous time-resolved studies of photoexcited carriers in this and related materials have revealed complex carrier dynamics and have shown that, at moderately high carrier densities, the time-resolved response is dominated by bimolecular recombination on picosecond time scales. However, important questions remain about the detailed mechanisms of the carrier dynamics, and especially the initial energy relaxation processes. In this work, we have carried out systematic studies of amorphous silicon and silicon-germanium alloys as a function of excitation density, temperature, and material composition. The high time resolution of the measurements has allowed us to directly address the initial relaxation dynamics.
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非晶半导体材料中的超快载流子热化动力学
只提供摘要形式。非晶半导体的技术应用和偏离晶体秩序所产生的不寻常性质的潜在物理原理都引起了人们的兴趣。特别是非晶硅已经成为理解无序系统的电子特性的原型材料。先前对该材料和相关材料中光激发载流子的时间分辨研究揭示了复杂的载流子动力学,并表明,在中等高载流子密度下,时间分辨响应主要是皮秒时间尺度上的双分子重组。然而,关于载流子动力学的详细机制,特别是初始能量松弛过程,仍然存在重要的问题。在这项工作中,我们对非晶硅和硅锗合金进行了系统的研究,作为激发密度、温度和材料成分的函数。测量的高时间分辨率使我们能够直接处理初始松弛动力学。
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