Structural, morphological and optoelectronic properties of screen-printed film deposited using Sb2Se3 nanowires

Sushil Kumar, Parly, Riya, M. Saravanan, U. Deshpande, R. Venkatesh
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The surface morphological properties as investigated from field emission scanning electron microscope (FESEM) show that the film is covered with nanowires of length 1-3μm and diameter 100-200nm uniformly distributed over the substrate but agglomerated uniformly as a spherical particle with diameter of ~0.8μm.Interestingly, optoelectronic properties of the film and nanocrystalline powder show a band gap value of 1.19eV and 1.22eV respectively with an infinitesimal change in the band gap of the order of 0.03eV which is in correspondence with the morphological properties.Sb2Se3 being a potential material for solar cells, photodetectors and thermoelectric applications, this combination of fast and facile solvent-mediated microwave synthesis and screen-printing approach exhibits importance towards the wearable technology application for harvesting alternate electrical energy. INTRODUCTION V-VI group binary compounds are typical narrow band semiconductors and their nanostructures are of prime interest because of their dimensional-dependent properties [1]. Among these materials, antimony selenide (Sb2Se3) has gained great attention because of its potential technical applications in many areas including photoelectric, photoluminescence, thermoelectric and photon conducting devices. [1] Research on nanotechnology concerns the fabrication of nanomaterials and their applications in a variety of areas. From last few decades it has emerged as a fast-growing field as the properties of nanomaterials are quite different than to those of bulk materials. In particular, one dimensional nanostructure such as nanowires, nanorods and nanotubes have attracted considerable attention due to their potential use in optical, electronic, magnetic and mechanical devices [2]. Among these compounds, the direct band-gap semiconductor Sb2Se3 (Eg ≈ 1.11 to 1.8 eV), with an orthorhombic crystal structure and Pbnm space group, has been extensively studied as an important thermoelectric material and photoconductive semiconductor and because of its high thermoelectric power (~1800μV/K) and unique solar characteristics [3.] It can be used in thermoelectric applications, as absorber in solar cells memory switching devices, [4,5]. In the past decade, various chemical methods have been developed for the synthesis of Sb2Se3 and other chalcogenide nanomaterials, such as vapor-phase processing, the template-directed method, the solgel route, the microwave-assisted chemical bath method, and hydrothermal/solvothermal synthesis. All of these methods have advantages and disadvantage [3.] Therefore, developing a rapid, green, high-yield synthesis of uniform Sb2Se3nanowires is still highly desired. Here we successfully synthesized Sb2Se3 nanostructures via a reliable and facile method. However, as far as we know, most of previous studies involve high-toxic reducing agent, timeconsuming protocol and exhibit low yield feature. Further, Sb2Se3 thin film can be deposited by different of deposition techniques, such as chemical bath deposition (CBD), vapor transport deposition (VTD), co-evaporation and so on. All these techniques are high cost and involves a lengthy procedure for the preparation of the film, so a low cost and less time-consuming technique is desirable. Screen printing is as such a low cost and fast results giving techniques [6]. Wet deposition of nanocrystalline -based colloidal inks using screen printing, inkjet printing, direct writing, or other layer-by-layer methods hold many advantages due to the ability to directly convert nanocrystalline inks into micro/macroscale functional materials and devices with great scalability, flexibility, and cost effectiveness Now a days, screen printing has also been explored as a more efficient way to fabricate thermoelectric devices [7]. We have prepared the film in air atmosphere by screen printing method and investigated its optoelectronic and structural properties. Surface morphology of the nanocrystalline powder Sb2Se3 and screen printed Sb2Se3film has also been investigated and reported in this work. EXPERIMENTAL DETAILS Sb2Se3 nanostructures has been synthesized via fast and facile microwave assisted solvothermal process. Sb2Se3 has been synthesized in the nanocrystalline powder form as follows. We have taken SbCl (80mg) and added SeO2(60mg) to it followed by addition of (12ml) oleyl amine in a conical flask and kept on magnetic stirring for 5hours.Then, the solution was microwave heated in “CEM” made “Discover” research-based microwave for 10 minutes. The colour of the solution changed to black. After heating, the solution was cooled down and cleaned with water and ethanol several times. Finally, Sb2Se3 precipitate has been collected in the dry powder form. Preparation of the ink: The nanocrystalline powder solution of Sb2Se3 was mixed with SbCl3, which act as binding agent along with ethylene glycol (solvent) for the preparation of slurry. Screen printing process: Homemade screen-printing setup was used for the deposition of film as shown in Fig1. Glass is used as the substrate for the preparation of the film. After the preparation of the film, it isannealed for 4 hours at 1250C at atmospheric pressure and then left the film to cool down and dry so that it sticks to the glass substrate properly. After drying of the film, further measurement has been performed. FIGURE 1. Schematic illustration of overall fabrication process of screen-printing film. RESULTS and DISCUSSION XRD measurement has been performed for confirming the crystal structure of the synthesized sample using Bruker D8 Advance X-ray diffractometer The XRD spectra of nanocrystalline powder and film of Sb2Se3 has been taken and analyzed as shown in Fig1. Nanocrystalline powder XRD spectrum is matching with the JCPDS file00015-0861. From the spectra we observed that the crystal structure of Sb2Se3is orthorhombic with Pbnm Space group and the lattice parameter of the Sb2Se3 was found to be a =11.780Å b =11.633 Å c =3.985 Å. FIGURE 2. showing the Sb2Se3 XRD spectra of the (a) nanocrystalline line powder and (b) screen printed film. Crystal size of the Sb2Se3 nanocrystalline powder is calculated by using the Debye Scherrer formula: -","PeriodicalId":18837,"journal":{"name":"NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020","volume":"19 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM2020","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/5.0060953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Structural, morphological and Optoelectronic properties of Sb2Se3 film prepared by optimized screen-printing method is investigated and presented in this work. Sb2Se3 nanowires synthesized by microwave assisted solvothermal method along with ethylene glycol is used as the ink for the preparation of Sb2Se3screen printed film. Structural analysis confirms the orthorhombic phase while the energy dispersive spectroscopy confirms the formation of Sb2Se3 composition. Crystallite size of the nanocrystalline powder (film) is found to be 60nm (104nm). The surface morphological properties as investigated from field emission scanning electron microscope (FESEM) show that the film is covered with nanowires of length 1-3μm and diameter 100-200nm uniformly distributed over the substrate but agglomerated uniformly as a spherical particle with diameter of ~0.8μm.Interestingly, optoelectronic properties of the film and nanocrystalline powder show a band gap value of 1.19eV and 1.22eV respectively with an infinitesimal change in the band gap of the order of 0.03eV which is in correspondence with the morphological properties.Sb2Se3 being a potential material for solar cells, photodetectors and thermoelectric applications, this combination of fast and facile solvent-mediated microwave synthesis and screen-printing approach exhibits importance towards the wearable technology application for harvesting alternate electrical energy. INTRODUCTION V-VI group binary compounds are typical narrow band semiconductors and their nanostructures are of prime interest because of their dimensional-dependent properties [1]. Among these materials, antimony selenide (Sb2Se3) has gained great attention because of its potential technical applications in many areas including photoelectric, photoluminescence, thermoelectric and photon conducting devices. [1] Research on nanotechnology concerns the fabrication of nanomaterials and their applications in a variety of areas. From last few decades it has emerged as a fast-growing field as the properties of nanomaterials are quite different than to those of bulk materials. In particular, one dimensional nanostructure such as nanowires, nanorods and nanotubes have attracted considerable attention due to their potential use in optical, electronic, magnetic and mechanical devices [2]. Among these compounds, the direct band-gap semiconductor Sb2Se3 (Eg ≈ 1.11 to 1.8 eV), with an orthorhombic crystal structure and Pbnm space group, has been extensively studied as an important thermoelectric material and photoconductive semiconductor and because of its high thermoelectric power (~1800μV/K) and unique solar characteristics [3.] It can be used in thermoelectric applications, as absorber in solar cells memory switching devices, [4,5]. In the past decade, various chemical methods have been developed for the synthesis of Sb2Se3 and other chalcogenide nanomaterials, such as vapor-phase processing, the template-directed method, the solgel route, the microwave-assisted chemical bath method, and hydrothermal/solvothermal synthesis. All of these methods have advantages and disadvantage [3.] Therefore, developing a rapid, green, high-yield synthesis of uniform Sb2Se3nanowires is still highly desired. Here we successfully synthesized Sb2Se3 nanostructures via a reliable and facile method. However, as far as we know, most of previous studies involve high-toxic reducing agent, timeconsuming protocol and exhibit low yield feature. Further, Sb2Se3 thin film can be deposited by different of deposition techniques, such as chemical bath deposition (CBD), vapor transport deposition (VTD), co-evaporation and so on. All these techniques are high cost and involves a lengthy procedure for the preparation of the film, so a low cost and less time-consuming technique is desirable. Screen printing is as such a low cost and fast results giving techniques [6]. Wet deposition of nanocrystalline -based colloidal inks using screen printing, inkjet printing, direct writing, or other layer-by-layer methods hold many advantages due to the ability to directly convert nanocrystalline inks into micro/macroscale functional materials and devices with great scalability, flexibility, and cost effectiveness Now a days, screen printing has also been explored as a more efficient way to fabricate thermoelectric devices [7]. We have prepared the film in air atmosphere by screen printing method and investigated its optoelectronic and structural properties. Surface morphology of the nanocrystalline powder Sb2Se3 and screen printed Sb2Se3film has also been investigated and reported in this work. EXPERIMENTAL DETAILS Sb2Se3 nanostructures has been synthesized via fast and facile microwave assisted solvothermal process. Sb2Se3 has been synthesized in the nanocrystalline powder form as follows. We have taken SbCl (80mg) and added SeO2(60mg) to it followed by addition of (12ml) oleyl amine in a conical flask and kept on magnetic stirring for 5hours.Then, the solution was microwave heated in “CEM” made “Discover” research-based microwave for 10 minutes. The colour of the solution changed to black. After heating, the solution was cooled down and cleaned with water and ethanol several times. Finally, Sb2Se3 precipitate has been collected in the dry powder form. Preparation of the ink: The nanocrystalline powder solution of Sb2Se3 was mixed with SbCl3, which act as binding agent along with ethylene glycol (solvent) for the preparation of slurry. Screen printing process: Homemade screen-printing setup was used for the deposition of film as shown in Fig1. Glass is used as the substrate for the preparation of the film. After the preparation of the film, it isannealed for 4 hours at 1250C at atmospheric pressure and then left the film to cool down and dry so that it sticks to the glass substrate properly. After drying of the film, further measurement has been performed. FIGURE 1. Schematic illustration of overall fabrication process of screen-printing film. RESULTS and DISCUSSION XRD measurement has been performed for confirming the crystal structure of the synthesized sample using Bruker D8 Advance X-ray diffractometer The XRD spectra of nanocrystalline powder and film of Sb2Se3 has been taken and analyzed as shown in Fig1. Nanocrystalline powder XRD spectrum is matching with the JCPDS file00015-0861. From the spectra we observed that the crystal structure of Sb2Se3is orthorhombic with Pbnm Space group and the lattice parameter of the Sb2Se3 was found to be a =11.780Å b =11.633 Å c =3.985 Å. FIGURE 2. showing the Sb2Se3 XRD spectra of the (a) nanocrystalline line powder and (b) screen printed film. Crystal size of the Sb2Se3 nanocrystalline powder is calculated by using the Debye Scherrer formula: -
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Sb2Se3纳米线丝网印刷薄膜的结构、形态及光电性能
本文研究了采用优化丝网印刷法制备的Sb2Se3薄膜的结构、形态和光电性能。采用微波辅助溶剂热法合成Sb2Se3纳米线,以乙二醇为油墨制备Sb2Se3丝网印刷薄膜。结构分析证实为正交相,能量色散谱分析证实为Sb2Se3组成。纳米晶粉末(膜)的晶粒尺寸为60nm (104nm)。通过场发射扫描电镜(FESEM)对薄膜表面形貌进行了研究,结果表明:薄膜表面覆盖着长度为1 ~ 3μm、直径为100 ~ 200nm的纳米线,这些纳米线均匀分布在衬底上,并均匀聚集成直径为~0.8μm的球形颗粒。有趣的是,薄膜和纳米晶粉末的光电性能分别显示出1.19eV和1.22eV的带隙值,带隙的微小变化约为0.03eV,这与形貌特性相一致。Sb2Se3是太阳能电池、光电探测器和热电应用的潜在材料,这种快速简便的溶剂介导的微波合成和丝网印刷方法的结合对可穿戴技术的应用具有重要意义,可用于收集替代电能。V-VI基团二元化合物是典型的窄带半导体,其纳米结构因其尺寸依赖性而备受关注。在这些材料中,硒化锑(Sb2Se3)由于其在光电、光致发光、热电和光子传导器件等许多领域的潜在技术应用而备受关注。[1]纳米技术的研究涉及纳米材料的制造及其在各个领域的应用。在过去的几十年里,由于纳米材料的性质与块状材料有很大的不同,它已经成为一个快速发展的领域。特别是一维纳米结构,如纳米线、纳米棒和纳米管,由于其在光学、电子、磁性和机械器件中的潜在应用而引起了人们的广泛关注。其中,直接带隙半导体Sb2Se3 (Eg≈1.11 ~ 1.8 eV)具有正交晶体结构和Pbnm空间基团,由于其高热电功率(~1800μV/K)和独特的太阳能特性,作为一种重要的热电材料和光导半导体得到了广泛的研究[3]。它可以用于热电应用,作为太阳能电池存储开关器件的吸收剂,[4,5]。在过去的十年中,各种化学方法被开发用于合成Sb2Se3和其他硫系纳米材料,如气相法、模板法、溶胶法、微波辅助化学浴法和水热/溶剂热合成。这些方法各有优缺点[3]。因此,开发一种快速、绿色、高产率的合成均匀sb2se3纳米线的方法仍然是非常需要的。本文通过一种可靠、简便的方法成功合成了Sb2Se3纳米结构。然而,据我们所知,以往的研究大多涉及高毒性还原剂,方案耗时长,产量低的特点。此外,Sb2Se3薄膜可以通过化学浴沉积(CBD)、气相传输沉积(VTD)、共蒸发等不同的沉积技术进行沉积。所有这些技术都是高成本的,并且涉及到一个漫长的制备过程,因此需要一种低成本和更短时间的技术。丝网印刷是一种成本低、效果快的印刷技术。采用丝网印刷、喷墨印刷、直接书写或其他逐层方法湿沉积纳米晶胶体油墨具有许多优点,因为它们能够直接将纳米晶油墨转化为微/宏观功能材料和器件,具有极大的可扩展性、灵活性和成本效益。如今,丝网印刷也被探索为一种更有效的制造热电器件的方法。采用丝网印刷法制备了该薄膜,并对其光电性能和结构性能进行了研究。本文还研究并报道了Sb2Se3纳米晶粉末和丝网印刷Sb2Se3薄膜的表面形貌。采用快速、简便的微波辅助溶剂热法合成了Sb2Se3纳米结构。Sb2Se3以纳米晶粉末形式合成如下:取SbCl (80mg),加入SeO2(60mg),再加入油胺(12ml),置于锥形烧瓶中磁力搅拌5小时。 然后,将溶液在“CEM”制造的“Discover”研究型微波炉中微波加热10分钟。溶液的颜色变成了黑色。加热后,将溶液冷却,用水和乙醇清洗数次。最后以干粉形式收集Sb2Se3沉淀。油墨的制备:将Sb2Se3纳米晶粉末溶液与SbCl3混合,SbCl3作为粘合剂与乙二醇(溶剂)混合,制备浆料。丝网印刷工艺:采用自制丝网印刷装置沉积薄膜,如图1所示。玻璃被用作薄膜制备的衬底。薄膜制备完成后,在1250C的常压下退火4小时,然后冷却干燥,使其正确粘附在玻璃基板上。薄膜干燥后,进行进一步的测量。图1所示。丝网印刷薄膜的整体制作过程示意图。利用Bruker D8 Advance x射线衍射仪进行XRD测量,确定合成样品的晶体结构。对Sb2Se3纳米晶粉末和膜的XRD谱图进行分析,如图1所示。纳米晶粉末XRD谱与JCPDS文件00015-0861匹配。从光谱上观察到Sb2Se3的晶体结构与Pbnm空间基团呈正交结构,其晶格参数为a =11.780Å b =11.633 Å c =3.985 Å。图2。(a)纳米晶线粉和(b)丝网印刷薄膜的Sb2Se3 XRD谱图。采用Debye - Scherrer公式计算Sb2Se3纳米晶粉的晶体尺寸:-
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