{"title":"Effect of iron ion implantation dose on optical and structural properties of CdS nanowires","authors":"J. Kaur, Ravinder Singh","doi":"10.1063/1.5122358","DOIUrl":null,"url":null,"abstract":"CdS being a member of II-VI group, having a wide optical band gap of 2.42 eV makes it suitable for use in the area of photovoltaic and laser devices. It is normally an n-type semiconductor and by d...","PeriodicalId":7262,"journal":{"name":"ADVANCES IN BASIC SCIENCE (ICABS 2019)","volume":"128 ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ADVANCES IN BASIC SCIENCE (ICABS 2019)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.5122358","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
CdS being a member of II-VI group, having a wide optical band gap of 2.42 eV makes it suitable for use in the area of photovoltaic and laser devices. It is normally an n-type semiconductor and by d...
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
