A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors

Shuhei Maeda, S. Ohshita, K. Furutani, Y. Yakubo, T. Ishizu, T. Atsumi, Y. Ando, D. Matsubayashi, K. Kato, T. Okuda, M. Fujita, S. Yamazaki
{"title":"A 20ns-write 45ns-read and 1014-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors","authors":"Shuhei Maeda, S. Ohshita, K. Furutani, Y. Yakubo, T. Ishizu, T. Atsumi, Y. Ando, D. Matsubayashi, K. Kato, T. Okuda, M. Fujita, S. Yamazaki","doi":"10.1109/ISSCC.2018.8310395","DOIUrl":null,"url":null,"abstract":"Development of LSI targeting artificial intelligence (AI) has accelerated, some chips have been used and are commercially available in a number of applications. LSI capable of performing arithmetic operation for deep learning, etc., at low power and high speed is crucial for achieving more sophisticated AI. Power consumption is increasing significantly owing particularly to the practical use of AI, and power reduction techniques are urgently necessary.","PeriodicalId":6617,"journal":{"name":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","volume":"9 1","pages":"484-486"},"PeriodicalIF":0.0000,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Solid - State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2018.8310395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Development of LSI targeting artificial intelligence (AI) has accelerated, some chips have been used and are commercially available in a number of applications. LSI capable of performing arithmetic operation for deep learning, etc., at low power and high speed is crucial for achieving more sophisticated AI. Power consumption is increasing significantly owing particularly to the practical use of AI, and power reduction techniques are urgently necessary.
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一种由60nm晶体氧化物半导体晶体管组成的20ns写入45ns读取1014周期持久存储器模块
针对人工智能(AI)的大规模集成电路的发展已经加速,一些芯片已经在许多应用中使用并商业化。能够以低功耗和高速度进行深度学习等算术运算的LSI对于实现更复杂的人工智能至关重要。由于人工智能的实际应用,功耗正在显著增加,因此迫切需要降低功耗的技术。
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