Impacts of Indirect Wider Bandgap of Non-Toxic AlxGa1-xAs Buffer in Copper-Indium-Gallium-Diselenide Photovoltaic Cell

Solid State Electronics Letters Pub Date : 2020-12-01 DOI:10.1016/j.ssel.2020.09.001

Sadia Islam Shachi , Nusrat Jahan , Ali Newaz Bahar , Md. Asaduzzaman

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引用次数: 1

Abstract

A numerical simulation and substantiation have been accomplished to analyze the impact of Al_0.9Ga_0.1As alloy composite buffer layer band gap and thickness, absorber layer thickness on a ZnO:Al/i-ZnO/Al_0.9Ga_0.1As/CIGS/Mo/SLG structured non-toxic Cd-free CIGS photovoltaic cell. In this study, the cell output attributes including efficiency (η) and collection efficiency (η_c) have been optimized through short circuit current density (J_sc), open-circuit voltage (V_oc) and fill factor (FF) optimization. Our study has been concluded with the maximum efficiency of 24.32% with V_oc = 839.76 mV, J_sc = 36.21mA/cm² and FF=76.96%, η_c = 83.16%. This enhanced efficiency is optimized by determining the bandgap of the buffer through altering the Al concentration to transit it from direct bandgap material to an indirect one. The thickness of the absorber on system performance is also investigated, and its extent is found in between 2 µm to 3 µm.

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无毒AlxGa1-xAs缓冲液间接增宽带隙对铜铟镓二硒化物光伏电池的影响

通过数值模拟和验证，分析了Al0.9Ga0.1As合金复合缓冲层带隙、厚度、吸收层厚度对ZnO:Al/i-ZnO/Al0.9Ga0.1As/CIGS/Mo/SLG结构无毒无cd CIGS光伏电池的影响。本研究通过优化短路电流密度(Jsc)、开路电压(Voc)和填充因子(FF)，优化电池输出属性，包括效率(η)和收集效率(ηc)。结果表明:Voc = 839.76 mV, Jsc = 36.21mA/cm2, FF=76.96%， ηc = 83.16%，效率最高，为24.32%。通过改变Al浓度使其从直接带隙材料过渡到间接带隙材料来确定缓冲带的带隙，从而优化了这种增强的效率。研究了吸波器厚度对系统性能的影响，发现其影响范围在2µm到3µm之间。

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Solid State Electronics Letters

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