Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications
Kamal Zeghdar , Hichem Bencherif , Lakhdar Dehimi , Fortunato Pezzimenti , Francesco G. DellaCorte
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引用次数: 3
Abstract
The current-voltage (ID-VD) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias current ranging from 100 nA up to 10 mA. The main device parameters, such as the barrier height and ideality factor are found strongly temperature-dependent. The observed behaviours are interpreted by using the thermionic emission (TE) theory with a single Gaussian distribution of the barrier height (BH). The corresponding Richardson constant is A* = 148.8 Acm−2K−2. This value is close to the theoretical one of 146 Acm−2K−2 for n-type 4H-SiC.
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