An N-Channel Band-to-Band Tunneling Flash Memory Design Optimization

Abstract

This letter describes the design optimization of a flash memory cell that uses source-induced band-to-band hot electron (SIBE) injection programming method. The programming efficiency is determined by the tunneling current to the floating gate, which is shown to be dependent with the gate length covered width. Optimal gate length covered width is empirically studied in this work through simulation, and we are able to observe more than an order of magnitude increase in the programming efficiency which tremendously reducing the total power consumption of the flash memory.