Light response and adsorption interaction of black phosphorus quantum dots and single-layer graphene phototransistor.

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Frontiers of Optoelectronics Pub Date : 2023-05-24 DOI:10.1007/s12200-023-00065-4
Qi Han, Yadong Jiang, Xianchao Liu, Chaoyi Zhang, Jun Wang
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Abstract

Black phosphorus quantum dots (BPQDs) are synthesized and combined with graphene sheet. The fabricated BPQDs/graphene devices are capable of detecting visible and near infrared radiation. The adsorption effect of BPQDs in graphene is clarified by the relationship of the photocurrent and the shift of the Dirac point with different substrate. The Dirac point moves toward a neutral point under illumination with both SiO2/Si and Si3N4/Si substrates, indicating an anti-doped feature of photo-excitation. To our knowledge, this provides the first observation of photoresist induced photocurrent in such systems. Without the influence of the photoresist the device can respond to infrared light up to 980 nm wavelength in vacuum in a cryostat, in which the photocurrent is positive and photoconduction effect is believed to dominate the photocurrent. Finally, the adsorption effect is modeled using a first-principle method to give a picture of charge transfer and orbital contribution in the interaction of phosphorus atoms and single-layer graphene.

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黑磷量子点与单层石墨烯光电晶体管的光响应及吸附相互作用。
合成了黑磷量子点(BPQDs)并与石墨烯片结合。制备的bpqd /石墨烯器件能够检测可见光和近红外辐射。通过光电流与Dirac点位移的关系,阐明了BPQDs在石墨烯中的吸附效果。在SiO2/Si和Si3N4/Si衬底的光照下,Dirac点向中性点移动,表明光激发具有抗掺杂特性。据我们所知,这提供了在这种系统中第一次观察光刻胶诱导光电流。在不受光刻胶影响的情况下,该器件可以在真空低温恒温器中响应波长高达980 nm的红外光,其中光电流为正,并且光导效应被认为是主导光电流。最后,利用第一性原理方法对磷原子与单层石墨烯相互作用中的电荷转移和轨道贡献进行了建模。
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来源期刊
Frontiers of Optoelectronics
Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
7.80
自引率
0.00%
发文量
583
期刊介绍: Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more
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