量子点内的量子阱,具有全局和局部约束的CdS/HgS纳米异质结构

Alf Mews, Alexander Eychmüller
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引用次数: 19

摘要

通过湿化学方法制备的半导体纳米晶体类似于MBE生长的量子点,其中载流子的迁移率降至零维。在本文中,我们总结了一个独特的系统,其中的载流子局部限制在异质量子点内的物理。利用高分辨率电子显微镜,我们将证明通过溶液化学方法导致嵌入HgS量子阱(QDQWs)的CdS量子点的原子层精度外延生长是可能的。通过时间相关单光子计数、瞬态微分吸收和荧光窄化光谱研究了该系统的光物理特性。结果反映了这种新物质非常复杂的电子结构,可以用扩展的有效质量方法来解释。
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Quantum Wells within Quantum Dots, a CdS/HgS Nanoheterostructure with Global and Local Confinement

Semiconductor nanocrystals prepared by methods of wet chemistry are similar to MBE grown quantum dots where the mobility of the charge carriers is reduced to zero dimensionality. In this paper we summarize the physics of a unique system in which the charge carriers are locally confined within a heterogeneous quantum dot. With high resolution electron microscopy we will show that epitaxial growth ot atomic layer precision is possible by methods of solution chemistry leading to CdS quantum dots with embedded HgS quantum wells (QDQWs). The photophysics of this system is investigated by time-correlated single photon counting, transient differential absorption and fluorescence line narrowing spectroscopies. The results reflect the very complex electronic structure of this new kind of matter which can be explained by an extended effective mass approach.

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