Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin
{"title":"基于algainp的无再生可见红色光子晶体表面发射激光器","authors":"Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin","doi":"10.1109/JQE.2023.3325238","DOIUrl":null,"url":null,"abstract":"AlGaInP-based visible red photonic crystal (PC) surface emitting lasers (SELs) without regrowth were demonstrated for the first time. Square-latticed and circular-shaped holes were deeply etched to form the air-pillar PC structure, where indium-tin-oxide was deployed to facilitate both current injection and laser light transmission. The optically pumped and electrically injected PC-SELs lased in wavelength range of 626-667 nm and 650-670 nm, respectively. For the best PC-SEL of 656-nm emissions, threshold current density was as low as 1.4 kA/cm2 and maximum laser power over 18 mW was achieved at 2.5 A. The un-optimized V-shaped PC holes led to weak optical coupling, which was manifested in the reconstructed band structure without clear bandgap opening at \n<inline-formula> <tex-math>$\\Gamma $ </tex-math></inline-formula>\n point. Therefore, one-dimensional lasing oscillation was favored and radiation far-field exhibited two-lobe pattern. Lastly, temperature dependent threshold currents and lasing wavelengths of PC-SELs were measured and investigated in terms of gain-cavity detuning.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2023-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"AlGaInP-Based Visible Red Photonic Crystal Surface Emitting Lasers Without Regrowth\",\"authors\":\"Tsung-Yeh Ku;Chi-Hao Wang;Ming-Chin Hsieh;Gray Lin\",\"doi\":\"10.1109/JQE.2023.3325238\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"AlGaInP-based visible red photonic crystal (PC) surface emitting lasers (SELs) without regrowth were demonstrated for the first time. Square-latticed and circular-shaped holes were deeply etched to form the air-pillar PC structure, where indium-tin-oxide was deployed to facilitate both current injection and laser light transmission. The optically pumped and electrically injected PC-SELs lased in wavelength range of 626-667 nm and 650-670 nm, respectively. For the best PC-SEL of 656-nm emissions, threshold current density was as low as 1.4 kA/cm2 and maximum laser power over 18 mW was achieved at 2.5 A. The un-optimized V-shaped PC holes led to weak optical coupling, which was manifested in the reconstructed band structure without clear bandgap opening at \\n<inline-formula> <tex-math>$\\\\Gamma $ </tex-math></inline-formula>\\n point. Therefore, one-dimensional lasing oscillation was favored and radiation far-field exhibited two-lobe pattern. Lastly, temperature dependent threshold currents and lasing wavelengths of PC-SELs were measured and investigated in terms of gain-cavity detuning.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2023-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10286818/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10286818/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
AlGaInP-Based Visible Red Photonic Crystal Surface Emitting Lasers Without Regrowth
AlGaInP-based visible red photonic crystal (PC) surface emitting lasers (SELs) without regrowth were demonstrated for the first time. Square-latticed and circular-shaped holes were deeply etched to form the air-pillar PC structure, where indium-tin-oxide was deployed to facilitate both current injection and laser light transmission. The optically pumped and electrically injected PC-SELs lased in wavelength range of 626-667 nm and 650-670 nm, respectively. For the best PC-SEL of 656-nm emissions, threshold current density was as low as 1.4 kA/cm2 and maximum laser power over 18 mW was achieved at 2.5 A. The un-optimized V-shaped PC holes led to weak optical coupling, which was manifested in the reconstructed band structure without clear bandgap opening at
$\Gamma $
point. Therefore, one-dimensional lasing oscillation was favored and radiation far-field exhibited two-lobe pattern. Lastly, temperature dependent threshold currents and lasing wavelengths of PC-SELs were measured and investigated in terms of gain-cavity detuning.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.