H. Ceric, A. Singulani, R. L. de Orio, S. Selberherr
{"title":"电迁移促进了焊点中金属间化合物的生长","authors":"H. Ceric, A. Singulani, R. L. de Orio, S. Selberherr","doi":"10.1109/IIRW.2013.6804185","DOIUrl":null,"url":null,"abstract":"Solder bumps are important interconnect components for three-dimensional (3D) integration. Their mechanical and electrical properties influence the overall reliability of 3D ICs. A particular characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation influences the operation of 3D ICs and, in connection with electromigration, may cause failures. We present a model for describing the growth of intermetallic compound inside a solder bump under the influence of electromigration. Simulation results based on our model are discussed in conjunction with corresponding experimental findings.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"21 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electromigration enhanced growth of intermetallic compound in solder bumps\",\"authors\":\"H. Ceric, A. Singulani, R. L. de Orio, S. Selberherr\",\"doi\":\"10.1109/IIRW.2013.6804185\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Solder bumps are important interconnect components for three-dimensional (3D) integration. Their mechanical and electrical properties influence the overall reliability of 3D ICs. A particular characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation influences the operation of 3D ICs and, in connection with electromigration, may cause failures. We present a model for describing the growth of intermetallic compound inside a solder bump under the influence of electromigration. Simulation results based on our model are discussed in conjunction with corresponding experimental findings.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"21 9\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804185\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804185","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electromigration enhanced growth of intermetallic compound in solder bumps
Solder bumps are important interconnect components for three-dimensional (3D) integration. Their mechanical and electrical properties influence the overall reliability of 3D ICs. A particular characteristic of solder bumps is that during technology processing and usage their material composition changes. This compositional transformation influences the operation of 3D ICs and, in connection with electromigration, may cause failures. We present a model for describing the growth of intermetallic compound inside a solder bump under the influence of electromigration. Simulation results based on our model are discussed in conjunction with corresponding experimental findings.
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